R5F564MFDDFB datasheet(148/162 Pages) RENESAS

148 / 162 page

R01DS0173EJ0120 Rev.1.20

Page 148 of 162

Oct 20, 2022

RX64M Group

2. Electrical Characteristics

Note 1. Definition of reprogram/erase cycle:

The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 100000),

erasing can be performed n times for each block. For instance, when 4-byte programming is performed 512 times for different

addresses in 2-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,

programming the same address for several times as one erasing is not enabled (overwriting is prohibited).

Note 2. This is the minimum number of times to guarantee all the characteristics after reprogramming (guaranteed range is from 1 to the

value of the minimum value).

Note 3. This shows the characteristic when the flash memory writer or self-programming library from Renesas Electronics is in use, and

the number of times programming and erasure proceed does not exceed the specified value.

Note 4. These values are based on the results of reliability testing.

Table 2.57

Data Flash Memory Characteristics

Conditions: VCC = AVCC0 = AVCC1 = VCC_USB = VBATT = 2.7 to 3.6 V, 2.7 ≤ VREFH0 ≤ AVCC0,

VCC_USBA = AVCC_USBA = 3.0 to 3.6 V

VSS = AVSS0 = AVSS1 = VREFL0 = VSS_USB = VSS1_USBA = VSS2_USBA = PVSS_USBA = AVSS_USBA = 0 V,

Temperature range for programming/erasure: Ta = Topr

Item

Symbol

FCLK = 4 MHz

20 MHz

≤ FCLK ≤ 60 MHz

Unit

Test

Conditions

Min.

Typ.

Max.

Min.

Typ.

Max.

Programming time

4 bytes

tDP4

—

0.36

3.8

—

0.16

1.7

Erasure time

64 bytes

tDE64

—

3.1

—

1.7

Blank check time

4 bytes

tDBC4

—

µs

64 bytes

tDBC64

—

280

—

100

µs

2 Kbytes

tDBC2K

—

6169

—

2200

µs

Reprogramming/erasure cycle*1

NDPEC

100000

—

100000

——

Times

Suspend delay time during

programming

tDSPD

—

264

—

120

µs

First suspend delay time during

erasure

(in suspend priority mode)

tDSESD1

—

216

—

120

µs

Second suspend delay time during

erasure (in suspend priority mode)

tDSESD2

—

300

—

300

µs

Suspend delay time during erasing

(in erasure priority mode)

tDSEED

—

300

—

300

µs

Forced stop command

tFD

—

µs

Data hold time*3, *4

tDDRP

—

Year

Ta ≤ 85°C

—

Ta ≤ 105°C

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