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AT90SCR100 Datasheet(PDF) 23 Page - ATMEL Corporation

Part # AT90SCR100
Description  8-bit Microcontroller for Smart Card Readers
PDF  433 Pages
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Manufacturer  ATMEL [ATMEL Corporation]
Direct Link  http://www.atmel.com
Logo ATMEL - ATMEL Corporation

AT90SCR100 Datasheet(HTML) 23 Page - ATMEL Corporation

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TPR0327AY–SMS–30Jan09
AT90SCR100
When using register indirect addressing modes with automatic pre-decrement and post-incre-
ment, the address registers X, Y, and Z are decremented or incremented.
The 32 general purpose working registers, 64 I/O registers, 160 Extended I/O Registers and the
4096 bytes of internal data SRAM in the AT90SCR100 are all accessible through all these
addressing modes. The Register File is described in “General Purpose Register File” on page
16.
6.2.1
Data Memory Access Times
This section describes the general access timing concepts for internal memory access. The
internal data SRAM access is performed in two clkCPU cycles as described in Figure 6-2.
Figure 6-2.
On-chip Data SRAM Access Cycles
6.3
EEPROM Data Memory
The AT90SCR100 contains 4K bytes of data EEPROM memory. It is organized as a separate
data space, in which single bytes can be read and written. The EEPROM has an endurance of at
least 100,000 write/erase cycles. The access between the EEPROM and the CPU is described
in the following section, specifying the EEPROM Address Registers, the EEPROM Data Regis-
ter, and the EEPROM Control Register.
For a detailed description of SPI and JTAG downloading to the EEPROM, see page 381, and
page 385 respectively.
6.3.1
EEPROM Read/Write Access
The EEPROM Access Registers are accessible in the I/O space.
The write access time for the EEPROM is given in Table 6-2. This is a self-timing function, wich
allows the user software to detect when the next byte can be written. If the user code contains
instructions that write the EEPROM, some precautions must be taken. In heavily filtered power
supplies, VCC is likely to rise or fall slowly on power-up/down. This causes the device, for some
period of time, to run at a voltage lower than specified as minimum, for the clock frequency used.
For details on how to avoid problems in these situations, See “Preventing EEPROM Corruption”
on page 28.
clk
WR
RD
Data
Data
Address
Address valid
T1
T2
T3
Compute Address
CPU
Memory Access Instruction
Next Instruction



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