R5F213G4DNSP datasheet(35/45 Pages) RENESAS

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R8C/3GD Group

5. Electrical Characteristics

REJ03B0289-0100 Rev.1.00

Feb 26, 2010

Page 33 of 41

Note:

1. 2.7 V

VCC < 4.2 V at Topr = 20 to 85 C (N version) / 40 to 85 C (D version), f(XIN) = 10 MHz, unless otherwise specified.

Table 5.19

Electrical Characteristics (3) [2.7 V

Vcc < 4.2 V]

Symbol

Parameter

Condition

Standard

Unit

Min.

Typ.

Max.

VOH

Output “H” voltage

Other than XOUT

Drive capacity High IOH = 5 mA

VCC

0.5

VCC

Drive capacity Low

IOH = 1 mA

VCC

0.5

VCC

XOUT

IOH = 200 A1.0

VCC

VOL

Output “L” voltage

Other than XOUT

Drive capacity High IOL = 5 mA

0.5

Drive capacity Low

IOL = 1 mA

0.5

XOUT

IOL = 200 A

0.5

VT+-VT-

Hysteresis

INT0, INT1, INT3,

KI0, KI1, KI2, KI3,

TRAIO, TRBO,

TRCIOA, TRCIOB,

TRCIOC, TRCIOD,

TRCTRG, TRCCLK,

ADTRG,

RXD0, RXD2,

CLK0, CLK2

VCC = 3.0 V

0.1

0.4

RESET

VCC = 3.0 V

0.1

0.5

IIH

Input “H” current

VI = 3 V, VCC = 3.0 V

4.0

IIL

Input “L” current

VI = 0 V, VCC = 3.0 V

4.0

RPULLUP

Pull-up resistance

VI = 0 V, VCC = 3.0 V

168

RfXIN

Feedback

resistance

XIN

0.3

RfXCIN

Feedback

resistance

XCIN

VRAM

RAM hold voltage

During stop mode

1.8

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