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R5F213G4DNSP Datasheet(PDF) 5 Page - Renesas Technology Corp |
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R5F213G4DNSP Datasheet(HTML) 5 Page - Renesas Technology Corp |
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5 / 45 page  R8C/3GD Group 1. Overview REJ03B0289-0100 Rev.1.00 Feb 26, 2010 Page 3 of 41 Note: 1. Specify the D version if D version functions are to be used. Table 1.2 Specifications for R8C/3GD Group (2) Item Function Specification Flash Memory • Programming and erasure voltage: VCC = 2.7 to 5.5 V • Programming and erasure endurance: 1,000 times (program ROM) • Program security: ROM code protect, ID code check • Debug functions: On-chip debug, on-board flash rewrite function Operating Frequency/Supply Voltage f(XIN) = 20 MHz (VCC = 2.7 to 5.5 V) f(XIN) = 5 MHz (VCC = 1.8 to 5.5 V) Current consumption Typ. 6.5mA (VCC = 5.0 V, f(XIN) = 20 MHz) Typ. 3.5mA (VCC = 3.0 V, f(XIN) = 10 MHz) Typ. 3.5 (VCC = 3.0 V, wait mode (f(XCIN) = 32 kHz)) Typ. 2.0 (VCC = 3.0 V, stop mode) Operating Ambient Temperature -20 to 85 C (N version) -40 to 85 C (D version) (1) Package 24-pin LSSOP Package code: PLSP0024JB-A (previous code: 24P2F-A) |
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