R5F213G4DNSP datasheet(31/45 Pages) RENESAS

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R8C/3GD Group

5. Electrical Characteristics

REJ03B0289-0100 Rev.1.00

Feb 26, 2010

Page 29 of 41

Note:

1. 4.2 V

VCC

5.5 V at Topr = 20 to 85 C (N version) / 40 to 85 C (D version), f(XIN) = 20 MHz, unless otherwise specified.

Table 5.13

Electrical Characteristics (1) [4.2 V

Vcc

5.5 V]

Symbol

Parameter

Condition

Standard

Unit

Min.

Typ.

Max.

VOH

Output “H”

voltage

Other than XOUT

Drive capacity High VCC = 5V IOH = 20 mA

VCC

2.0

VCC

Drive capacity Low VCC = 5V

IOH = 5 mA

VCC

2.0

VCC

XOUT

VCC = 5V

IOH = 200 A1.0

VCC

VOL

Output “L”

voltage

Other than XOUT

Drive capacity High VCC = 5V IOL = 20 mA

2.0

Drive capacity Low VCC = 5V

IOL = 5 mA

2.0

XOUT

VCC = 5V

IOL = 200 A

0.5

VT+-VT-

Hysteresis

INT0, INT1, INT3,

KI0,KI1, KI2, KI3,

TRAIO, TRBO,

TRCIOA, TRCIOB,

TRCIOC, TRCIOD,

TRCTRG, TRCCLK,

ADTRG,

RXD0, RXD2,

CLK0, CLK2

0.1

1.2

RESET

0.1

1.2

IIH

Input “H” current

VI = 5 V, VCC = 5.0V

5.0

IIL

Input “L” current

VI = 0 V, VCC = 5.0V

5.0

RPULLUP

Pull-up resistance

VI = 0 V, VCC = 5.0V

100

RfXIN

Feedback

resistance

XIN

0.3

RfXCIN

Feedback

resistance

XCIN

VRAM

RAM hold voltage

During stop mode

1.8

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