R5F213G4DNSP datasheet(39/45 Pages) RENESAS

39 / 45 page

R8C/3GD Group

5. Electrical Characteristics

REJ03B0289-0100 Rev.1.00

Feb 26, 2010

Page 37 of 41

Note:

1. 1.8 V

VCC < 2.7 V at Topr = 20 to 85 C (N version) / 40 to 85 C (D version), f(XIN) = 5 MHz, unless otherwise specified.

Table 5.25

Electrical Characteristics (5) [1.8 V

Vcc < 2.7 V]

Symbol

Parameter

Condition

Standard

Unit

Min.

Typ.

Max.

VOH

Output “H” voltage

Other than XOUT

Drive capacity High

IOH = 2 mA

VCC

0.5

VCC

Drive capacity Low

IOH = 1 mA

VCC

0.5

VCC

XOUT

IOH = 200 A1.0

VCC

VOL

Output “L” voltage

Other than XOUT

Drive capacity High

IOL = 2 mA

0.5

Drive capacity Low

IOL = 1 mA

0.5

XOUT

IOL = 200 A

0.5

VT+-VT-

Hysteresis

INT0, INT1, INT3,

KI0,KI1, KI2, KI3,

TRAIO, TRBO,

TRCIOA, TRCIOB,

TRCIOC, TRCIOD,

TRCTRG, TRCCLK,

ADTRG,

RXD0, RXD2,

CLK0, CLK2

0.05

0.2

RESET

0.05

0.20

IIH

Input “H” current

VI = 2.2 V, VCC = 2.2 V

4.0

IIL

Input “L” current

VI = 0 V, VCC = 2.2 V

4.0

RPULLUP

Pull-up resistance

VI = 0 V, VCC = 2.2 V

140

300

RfXIN

Feedback

resistance

XIN

0.3

RfXCIN

Feedback

resistance

XCIN

VRAM

RAM hold voltage

During stop mode

1.8

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