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MIC3000BML Datasheet(PDF) 65 Page - Micrel Semiconductor |
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MIC3000BML Datasheet(HTML) 65 Page - Micrel Semiconductor |
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65 / 68 page ![]() October 2004 65 M9999-101204 MIC3000 Micrel RBASE SHDN VDD High-Side Low-Side ILD RPULLUP Q1 PNP SHDN VDD Q1 P-FET ILD RPULLUP RBASE SHDN ILD GND RPULLDOWN Q1 NPN SHDN ILD Q1 N-FET GND RPULLUP Figure 33. Redundant Switch Circuits Temperature Sensing The MIC3000 can measure and report its own internal temperature or the temperature of a remote PN junction or “thermal diode”. In either case it is important to note that any board-mounted semiconductor device tends to track the ground plane temperature around it. The dominant thermal path to the sensor is often the ground pin. The ground pin usually connects to the leadframe paddle on which the die is mounted. Typical semiconductor packages, being non-con- ductive plastic, insulate the device from the ambient air. The advantage to using a remote sensor is that the tempera- ture may be sensed at a specific location, such as in the proximity of the laser diode, or away from any heat sources where it will more closely track the transceiver’s case tem- perature. The measured temperature is reported via the digital diagnostics registers and is used to index the tempera- ture compensation tables. (Note: SFF-8472 does not specify the meaning of the reported temperature information or the location from which it is taken. This information is to be specified in the transceiver vendor’s datasheet.) Remote Sensing For remote temperature sensing using the XPN pin, most small-signal PNP transistors with characteristics similar to the JEDEC 2N3906 will perform well as thermal diodes. Table 22 lists several examples of such parts that Micrel has tested for use with the MIC3000. Other transistors equivalent to these should also work well. Vendor Part Number Package Fairchild Semiconductor MMBT3906 SOT-23 On Semiconductor MMBT3906L SOT-23 Infineon Technologies SMBT3906/MMBT3906 SOT-23 Samsung Semiconductor KST3906-TF SOT-23 Table 22. Transistors Suitable for Use as Remote Diodes Minimizing Errors Self-Heating One concern when measuring temperature is to avoid errors induced by self-heating. Self-heating is caused by power dissipation within the MIC3000. It is directly proportional to the internal power dissipation and the junction-to-ambient thermal resistance, θ JA. The dissipation in the MIC3000 must be calculated and reduced to a temperature offset. The power dissipation, PDISS, includes the effect of quiescent current and all currents flowing into or out of any signal pins, espe- cially VBIAS and VMOD. The temperature rise caused by self- heating is given by: ∆tPDISS JA =× θ (9) θ JA is given in the “Operating Ratings” section above as 43°C/W. The possible contributors to self-heating are listed in Table 23. The numbers given in Table 23 suggest that the power dissipation in a typical application will be no more than a few tens of milliwatts, leading to self-heating on the order of 1°C. Description Magnitude Notes Quiescent power IDD ∞ VDD Typically VDD = 3.3V, IDD = 2.7mA ∅ 3.3V ∞ 2.7mA = 8.91mW. SHDN current IOL ∞ VOL Negligible if MOSFET is used as shutdown device. TXFAULT current IOL ∞ VOL Worst case is VDD2/RPULLUP; RPULLUP is 4.7ký min. per SFP MSA ∅ 3.3V2/4.7ký = 2.32mW. VBIAS current VBIAS ∞ IVBIAS or (VDD–VBIAS) ∞ IVBIAS Worst-case is VREF ∞ 10mA = 1.22V ∞ 10mA = 12.3mW. VMOD current VMOD ∞ IVMOD or (VDD–VMOD) ∞ IVMOD Worst-case is VREF ∞ 10mA = 1.22V ∞ 10mA = 12.3mW. RSOUT current IOL ∞ VOL Only for rate-agile applications using RSIN/RSOUT. DATA current IOL ∞ VOL ∞ duty_cycle May be negligible; Depends on bus speed, pullup current, and bus activity. RXLOS current IOL ∞ VOL Worst case is VDD2/RPULLUP; RPULLUP is 4.7Ký min. per SFP MSA ∅ 3.3V2/4.7ký = 2.32mW. Table 23. Contributors to Self-Heating |
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