SPC56EC64L8 datasheet(56/118 Pages) STMICROELECTRONICS

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Electrical Characteristics

SPC564Bxx - SPC56ECxx

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Doc ID 17478 Rev 4

4.6.3

I/O output DC characteristics

The following tables provide DC characteristics for bidirectional pads:

●

Table 15 provides weak pull figures. Both pull-up and pull-down resistances are

supported.

●

Table 16 provides output driver characteristics for I/O pads when in SLOW

configuration.

●

Table 17 provides output driver characteristics for I/O pads when in MEDIUM

configuration.

●

Table 18 provides output driver characteristics for I/O pads when in FAST configuration.

Table 14.

I/O input DC electrical characteristics

Symbol

Parameter

Conditions(1)

Value(2)

Unit

Min

Typ

Max

VIH

SR P

Input high level CMOS (Schmitt

Trigger)

—0.65VDD

—VDD +0.4

VIL

SR P

Input low level CMOS (Schmitt

Trigger)

—

−0.3

—

0.35VDD

VHYS CC C

Input hysteresis CMOS (Schmitt

Trigger)

—0.1VDD

——

ILKG CC

Digital input leakage

No injection

on adjacent

TA = −40 °C

—

PTA = 25 °C

—

DTA = 105 °C

—

500

PTA = 125 °C

—

1000

WFI

SR P

Width of input pulse rejected by

analog filter(3)

——

—

40(4)

WNFI SR P

Width of input pulse accepted by

analog filter(3)

—

1000(4)

——

VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified.

VDD as mentioned in the table is VDD_HV_A/VDD_HV_B. All values need to be confirmed during device validation.

Analog filters are available on all wakeup lines.

The width of input pulse in between 40 ns to 1000 ns is indeterminate. It may pass the noise or may not depending on

silicon sample to sample variation.

Table 15.

I/O pull-up/pull-down DC electrical characteristics

Symbol

Parameter

Conditions(1),(2)

Value

Unit

Min

Typ

Max

|IWPU|CC

Weak pull-up

current absolute

value

VIN = VIL, VDD =

5.0 V ± 10%

PAD3V5V = 0

—

150

µA

PAD3V5V =

1(3)

—

250

VIN = VIL, VDD =

3.3 V ± 10%

PAD3V5V = 1

—

150

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