PXR40 datasheet(55/100 Pages) FREESCALE

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Electrical characteristics

PXR40 Microcontroller Data Sheet, Rev. 1

Freescale Semiconductor

San Jose, CA 95134

(408) 943-6900

MIL-SPEC and EIA/JESD (JEDEC) specifications are available from Global Engineering Documents at 800-854-7179 or

303-397-7956.

JEDEC specifications are available on the WEB at http://www.jedec.org.

•

C.E. Triplett and B. Joiner, “An Experimental Characterization of a 272 PBGA Within an Automotive Engine

Controller Module,” Proceedings of SemiTherm, San Diego, 1998, pp. 47-54.

•

G. Kromann, S. Shidore, and S. Addison, “Thermal Modeling of a PBGA for Air-Cooled Applications,” Electronic

Packaging and Production, pp. 53-58, March 1998.

•

B. Joiner and V. Adams, “Measurement and Simulation of Junction to Board Thermal Resistance and Its Application

in Thermal Modeling,” Proceedings of SemiTherm, San Diego, 1999, pp. 212-220.

5.3

EMI (Electromagnetic Interference) characteristics

To find application notes that provide guidance on designing your system to minimize interference from radiated emissions, go

to www.freescale.com and perform a keyword search for “radiated emissions.” The following tables list the values of the

device's radiated emissions operating behaviors.

Table 5. EMC radiated emissions operating behaviors: 416 BGA

Symbol

Description

Conditions

fOSC

fSYS

Frequency

band (MHz)

Level

(max.)

Unit Notes

VRE_TEM

Radiated emissions,

electric field and

magnetic field

VDD = 1.2 V

VDDE = 3.3 V

VDDEH = 5 V

TA = 25 °C

416 BGA

EBI off

CLK on

FM off

40 MHz crystal

264 MHz

(fEBI_CAL =66

MHz)

0.15–50

V

1 Determined according to IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and Wideband TEM Cell

Method, and SAE Standard J1752-3, Measurement of Radiated Emissions from Integrated Circuits—TEM/Wideband TEM

(GTEM) Cell Method.

50–150

150–500

500–1000

IEC and SAE level

2 I = 36 dB

V

—

1, 3

3 Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and Wideband

TEM Cell Method, and Appendix D of SAE Standard J1752-3, Measurement of Radiated Emissions from Integrated

Circuits—TEM/Wideband TEM (GTEM) Cell Method.

VRE_TEM

Radiated emissions,

electric field and

magnetic field

VDD = 1.2 V

VDDE = 3.3 V

VDDEH = 5 V

TA = 25 °C

416 BGA

EBI off

CLK off

FM on4

4 “FM on” = FM depth of ±2%

40 MHz crystal

264 MHz

(fEBI_CAL =66

MHz)

0.15–50

V

50–150

150–500

500–1000

IEC and SAE level

5 K = 30 dB

V

—

1,3

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