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PXR40 Datasheet(PDF) 71 Page - Freescale Semiconductor, Inc |
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PXR40 Datasheet(HTML) 71 Page - Freescale Semiconductor, Inc |
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71 / 100 page ![]() Electrical characteristics PXR40 Microcontroller Data Sheet, Rev. 1 Freescale Semiconductor 71 5.10 C90 flash memory electrical characteristics Table 24 shows the Platform Flash Configuration Register 1 (PFCPR1) settings versus frequency of operation. Refer to the device reference manual for definitions of these bit fields. Table 22. Flash program and erase specifications Spec Characteristic Symbol Min Typ1 1 Typical program and erase times assume nominal supply values and operation at 25 oC. Initial Max2 2 Initial factory condition: 100 program/erase cycles, 25 oC, typical supply voltage, 80 MHz minimum system frequency. Max3 3 The maximum erase time occurs after the specified number of program/erase cycles. This maximum value is characterized but not guaranteed. Unit 1 Double Word (64 bits) Program Time4 4 Program times are actual hardware programming times and do not include software overhead. tdwprogram — 38 — 500 s 2 Page Program Time4,5 5 Page size is 128 bits (4 words). tpprogram — 45 160 500 s 3 16 KB Block Pre-program and Erase Time t16kpperase — 270 1000 5000 ms 4 64 KB Block Pre-program and Erase Time t64kpperase — 800 1800 5000 ms 5 128 KB Block Pre-program and Erase Time t128kpperase — 1500 2600 7500 ms 6 256 KB Block Pre-program and Erase Time t256kpperase — 3000 5200 15000 ms Table 23. Flash EEPROM module life Spec Characteristic Symbol Min Typical1 1 Typical endurance is evaluated at 25 °C. Product qualification is performed to the minimum specification. For additional information on the Freescale definition of Typical Endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile Memory. Unit 1 Number of program/erase cycles per block for 16 KB and 64 KB blocks over the operating temperature range (TJ) P/E 100,000 — cycles 2 Number of program/erase cycles per block for 128 KB and 256 KB blocks over the operating temperature range (TJ) P/E 1,000 100,000 cycles 3 Minimum Data Retention at 85 °C ambient temperature2 Blocks with 0–1,000 P/E cycles Blocks with 1,001–10,000 P/E cycles Blocks with 10,001–100,000 P/E cycles 2 Ambient temperature averaged over duration of application, not to exceed product operating temperature range. Retention 20 10 5 — — — years |
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