ACT8600 datasheet(20/50 Pages) ACTIVE-SEMI

20 / 50 page

ACT8600

Rev 3, 15-Nov-12

Innovative Power

ActivePMU

TM and ActivePathTM are trademarks of Active-Semi.

2CTM is a trademark of NXP.

- 20 -

www.active-semi.com

LOW-IQ LDO ELECTRICAL CHARACTERISTICS

(

VVSYS = 3.6V, COUT9 = COUT10 = 1µF, TA = 25°C, unless otherwise specified.)

: VNOM refers to the nominal output voltage level for VOUT as defined by the Ordering Information section.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

REG9 (VDDRTC18) —

VNOM = 3.3V

Operating Voltage Range

VOUT =1.8V

2.5

5.5

Output Voltage Accuracy

IOUT = 1mA

-2.5

VNOM

3.5

Line Regulation

VVSYS = VOUT + 1.2V to VVSYS = 5.5V

0.2

%/V

Supply Current from VSYS

VVSYS = VOUT + 1.2V

VVSYS < VOUT + 0.7V

Maximum Output current

Stable COUT Range

0.47

µF

REG10 (VDDRTC12) —

VNOM = 1.2V

Operating Voltage Range

1.7

5.5

Output Voltage Accuracy

IOUT = 1mA

-3.5

VNOM

2.5

Line Regulation

VIN = VOUT + 0.5V to VIN = 5.5V

0.2

%/V

Supply Current from VOUT9

µA

Maximum Output current

Stable COUT Range

0.22

µF

µA

OTG SUBSYSTEM ELECTRICAL CHARACTERISTICS

(VINL = 3.6V, TA = 25°C, unless otherwise specified.)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

5VIN to VBUS (Q1)

Switch on resistance

5VIN = 5V, ILOAD = 100mA

0.23

Ω

Current Limit Threshold

500

700

Current Limit Delay

256

CHGIN to VBUS (Q2)

Switch on resistance

CHGIN = 5V, ILOAD = 100mA

0.34

Ω

Current Limit Threshold

500

700

Current Limit Delay

256

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