IO96NDB2V1 datasheet(50/242 Pages) MICROSEMI

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ProASIC3L DC and Switching Characteristics

2-34

Revision 13

Table 2-36 • I/O Output Buffer Maximum Resistances1

Applicable to Pro I/Os

Standard

Drive Strength

RPULL-DOWN

(

) 2

RPULL-UP

(

) 3

3.3 V LVTTL / 3.3 V LVCMOS

4 mA

100

300

8 mA

150

12 mA

16 mA

24 mA

3.3 V LVCMOS Wide Range

100 µA

Same as regular 3.3 V LVCMOS Same as regular 3.3 V LVCMOS

2.5 V LVCMOS

4 mA

100

200

8 mA

100

12 mA

16 mA

24 mA

1.8 V LVCMOS

2 mA

200

225

4 mA

100

112

6 mA

8 mA

12 mA

16 mA

1.5 V LVCMOS

2 mA

200

224

4 mA

100

112

6 mA

8 mA

12 mA

1.2 V LVCMOS

2 mA

158

164

1.2 V LVCMOS Wide Range

100 µA

Same as regular 1.2 V LVCMOS Same as regular 1.2 V LVCMOS

3.3 V PCI/PCI-X

Per PCI/PCI-X

specification

3.3 V GTL

20 mA4

–

2.5 V GTL

20 mA4

–

3.3 V GTL+

35 mA

–

2.5 V GTL+

33 mA

–

HSTL (I)

8 mA

HSTL (II)

15 mA4

SSTL2 (I)

15 mA

SSTL2 (II)

18 mA

SSTL3 (I)

14 mA

SSTL3 (II)

21 mA

Notes:

1. These maximum values are provided for informational reasons only. Minimum output buffer resistance values depend

on VCCI, drive strength selection, temperature, and process. For board design considerations and detailed output buffer

resistances, use the corresponding IBIS models located at http://www.microsemi.com/soc/download/ibis/default.aspx.

2. R(PULL-DOWN-MAX) = (VOLspec) / IOLspec

3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec

4. Output drive strength is below JEDEC specification.

IO96NDB2V1 Datasheet(PDF) 50 Page - Microsemi Corporation

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