IO96NDB2V1 datasheet(56/242 Pages) MICROSEMI

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ProASIC3L DC and Switching Characteristics

2-40

Revision 13

The length of time an I/O can withstand IOSH/IOSL events depends on the junction temperature. The

reliability data below is based on a 3.3 V, 12 mA I/O setting, which is the worst case for this type of

analysis.

For example, at 100°C, the short current condition would have to be sustained for more than six months

to cause a reliability concern. The I/O design does not contain any short circuit protection, but such

protection would only be needed in extremely prolonged stress conditions.

Table 2-42 • I/O Short Currents IOSH/IOSL

Applicable to Standard Plus I/O Banks

Drive Strength

IOSL (mA)*

IOSH (mA)*

3.3 V LVTTL / 3.3 V

LVCMOS

2 mA

4 mA

6 mA

8 mA

12 mA

103

109

16 mA

103

109

3.3 V LVCMOS Wide Range

100 µA

Same as regular 3.3 V LVCMOS Same as regular 3.3 V LVCMOS

2.5 V LVCMOS

2 mA

4 mA

6 mA

8 mA

12 mA

1.8 V LVCMOS

2 mA

4 mA

6 mA

8 mA

1.5 V LVCMOS

2 mA

4 mA

1.2 V LVCMOS

2 mA

1.2 V LVCMOS Wide Range

100 µA

3.3 V PCI/PCI-X

Per PCI/PCI-X

specification

103

109

Note: TJ = 100°C

Table 2-43 • Schmitt Trigger Input Hysteresis, Hysteresis Voltage Value (Typ) for Schmitt Mode Input Buffers

Input Buffer Configuration

Hysteresis Value (typ.)

3.3 V LVTTL/LVCMOS/PCI/PCI-X (Schmitt trigger mode)

240 mV

2.5 V LVCMOS (Schmitt trigger mode)

140 mV

1.8 V LVCMOS (Schmitt trigger mode)

80 mV

1.5 V LVCMOS (Schmitt trigger mode)

60 mV

1.2 V LVCMOS (Schmitt trigger mode)

40 mV

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