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LAN8742Ai-CZ Datasheet(PDF) 107 Page - Microchip Technology |
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LAN8742Ai-CZ Datasheet(HTML) 107 Page - Microchip Technology |
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107 / 124 page ![]() 2013-2015 Microchip Technology Inc. DS00001989A-page 107 LAN8742A/LAN8742Ai Note 1: This specification applies to all inputs and tri-stated bi-directional pins. Internal pull-down and pull-up resis- tors add ±50 µA per-pin (typical). Note 1: Measured at line side of transformer, line replaced by 100 Ω (±1%) resistor. 2: Offset from 16 ns pulse width at 50% of pulse peak. 3: Measured differentially. Note 1: Min/max voltages guaranteed as measured with 100 Ω resistive load. TABLE 5-7: VARIABLE I/O BUFFER CHARACTERISTICS Parameter Symbol Min. 1.8 V Typ. 2.5 V Typ. 3.3 V Typ. Max. Unit Note VIS Type Input Buffer Low Input Level High Input Level Neg-Going Threshold Pos-Going Threshold Schmitt Trigger Hystere- sis (VIHT - VILT) Input Leakage (VIN = VSS or VDDIO) Input Capacitance VILI VIHI VILT VIHT VHYS IIH CIN -0.3 0.64 0.81 102 -10 0.83 0.99 158 1.15 1.29 136 1.41 1.65 138 3.6 1.76 1.90 288 10 2 V V V V mV µA pF Schmitt trigger Schmitt trigger (see Note 1) VO8 Type Buffers Low Output Level High Output Level VOL VOH VDDIO - 0.4 0.4 V V IOL = 8 mA IOH = -8 mA VOD8 Type Buffer Low Output Level VOL 0.4 V IOL = 8 mA TABLE 5-8: 100BASE-TX TRANSCEIVER CHARACTERISTICS Parameter Symbol Min. Typ. Max. Unit Note Peak Differential Output Voltage High VPPH 950 - 1050 mVpk (see Note 1) Peak Differential Output Voltage Low VPPL -950 - -1050 mVpk (see Note 1) Signal Amplitude Symmetry VSS 98 - 102 % (see Note 1) Signal Rise and Fall Time TRF 3.0 - 5.0 ns (see Note 1) Rise and Fall Symmetry TRFS - - 0.5 ns (see Note 1) Duty Cycle Distortion DCD 35 50 65 % (see Note 2) Overshoot and Undershoot VOS -- 5 % Jitter 1.4 ns (see Note 3) TABLE 5-9: 10BASE-T TRANSCEIVER CHARACTERISTICS Parameter Symbol Min. Typ. Max. Unit Note Transmitter Peak Differential Output Voltage VOUT 2.2 2.5 2.8 V (see Note 1) Receiver Differential Squelch Threshold VDS 300 420 585 mV |
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