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MSP430F423IPM Datasheet(PDF) 32 Page - Texas Instruments |
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MSP430F423IPM Datasheet(HTML) 32 Page - Texas Instruments |
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32 / 59 page ![]() 32 MSP430F427, MSP430F425, MSP430F423 SLAS421B – APRIL 2004 – REVISED NOVEMBER 2016 www.ti.com Submit Documentation Feedback Product Folder Links: MSP430F427 MSP430F425 MSP430F423 Detailed Description Copyright © 2004–2016, Texas Instruments Incorporated 6.6 Memory Organization Table 6-9 summarizes the memory map of the MSP430F42x MCUs. Table 6-9. Memory Organization MSP430F423 MSP430F425 MSP430F427 Memory Size 8KB 16KB 32KB Interrupt vector Flash 0FFFFh–0FFE0h 0FFFFh–0FFE0h 0FFFFh–0FFE0h Code memory Flash 0FFFFh–0E000h 0FFFFh–0C000h 0FFFFh–08000h Information memory Size 256 Byte 256 Byte 256 Byte 010FFh–01000h 010FFh–01000h 010FFh–01000h Boot memory Size 1KB 1KB 1KB 0FFFh–0C00h 0FFFh–0C00h 0FFFh–0C00h RAM Size 256 Byte 512 Byte 1KB 02FFh–0200h 03FFh–0200h 05FFh–0200h Peripherals 16-bit 01FFh–0100h 01FFh–0100h 01FFh–0100h 8-bit 0FFh–010h 0FFh–010h 0FFh–010h 8-bit SFR 0Fh–00h 0Fh–00h 0Fh–00h 6.7 Bootloader (BSL) The BSL lets users program the flash memory or RAM using a UART serial interface. Access to the MCU memory through the BSL is protected by user-defined password. For complete description of the features of the BSL and its implementation, see MSP430 Programming WIth the Bootloader (BSL). BSL FUNCTION PM PACKAGE PINS Data transmit 53 - P1.0 Data receiver 52 - P1.1 6.8 Flash Memory The flash memory (see Figure 6-7) can be programmed using the JTAG port, the bootloader, or in system by the CPU. The CPU can perform single-byte and single-word writes to the flash memory. Features of the flash memory include: • Flash memory has n segments of main memory and two segments of information memory (A and B) of 128 bytes each. Each segment in main memory is 512 bytes in size. • Segments 0 to n may be erased in one step, or each segment may be individually erased. • Segments A and B can be erased individually, or as a group with segments 0 to n. Segments A and B are also called information memory. • New devices may have some bytes programmed in the information memory (needed for test during manufacturing). The user should perform an erase of the information memory before the first use. |
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