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DAP018x Marking, DAP018DDR2G Datasheet(PDF) 25 Page - ON Semiconductor |
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DAP018DDR2G Datasheet(HTML) 25 Page - ON Semiconductor |
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25 / 28 page ![]() DAP018A/B/C/D/F http://onsemi.com 25 65kHz 68.9kHz 61.1kHz adjustable Figure 50. Modulation Effects on the Clock Signal by the Jittering Sawtooth Jitter ramp Internal sawtooth Over Power Protection There are several known ways to implement Over Power Protection (OPP), all suffering from particular problems. These problems range from the added consumption burden on the converter or the skip−cycle disturbance brought by the current−sense offset. A way to reduce the power capability at high line is described by Figure 52. On this drawing, a voltage is derived from the auxiliary winding and produces a negative level during the on−time of the main power transistor. The negative voltage amplitude directly relates to the input level via the transformer turn ratio linking the primary winding to the auxiliary winding. Figure 51 depicts the typical signal obtained on the auxiliary winding: 1 v(24) 464u 472u 480u 488u 496u time in seconds −40.0 −20.0 0 20.0 40.0 1 1 −40.0 −20.0 0 20.0 40.0 1 Figure 51. The Signal Obtained on the Auxiliary Winding Swings Negative During the On−time off−time on−time N1(Vout + Vf) −N2Vbulk During the off−time, the voltage plateaus to a positive level depending on the turn ratio between the output winding (Ns) and the power winding. This ratio is noted N1. During the on−time, the transformer terminal swings to a negative voltage whose amplitude now depends on the turn ratio N2, equal to the primary (Np) to the auxiliary winding ratio (Naux). If we place a resistive divider between the auxiliary winding and the OPP pin, as suggested by Figure 52, we have a means to influence the internal setpoint as the bulk voltage increases. The equations to design the network are fairly simple: Suppose we need to reduce the peak current from 2.5 A at low line, to 2 A at high line. This corresponds to 20% reduction or a setpoint voltage of 640 mV. To reach this level, then the negative voltage developed on the OPP pin must reach: VOPP + 800 * 640 + −160 mV (eq. 4) |
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