HY27SF161G2M-VIP datasheet(19/48 Pages) HYNIX

19 / 48 page

Rev 0.7 / Apr. 2005

Preliminary

HY27UF(08/16)1G2M Series

HY27SF(08/16)1G2M Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Parameter

Symbol

Test Conditions

1.8Volt

3.3Volt

Unit

Min

Typ

Max

Min

Typ

Max

Operating

Current

Sequential

Read

ICC1

tRC=60ns(1),

CE#=VIL, IOUT=0mA

-8

Program

ICC2

Erase

ICC3

Stand-by Current (TTL)

ICC4

CE#=VIH,

PRE=WP#=0V/Vcc

Stand-by Current (CMOS)

ICC5

CE#=Vcc-0.2,

PRE=WP#=0V/Vcc

-10

Input Leakage Current

ILI

VIN=0 to 3.6V

Output Leakage Current

ILO

VOUT=0 to 3.6V

Input High Voltage

VIH

-Vcc-0.4

Vcc+

0.3

Vcc+

0.3

Input Low Voltage

VIL

-0.3

0.4

-0.3

0.8

Output High Voltage

Level

VOH

IOH=-100uA

Vcc-0.1

IOH=-400uA

2.4

Output Low Voltage Level

VOL

IOL=100uA

0.1

IOL=2.1mA

0.4

Output Low Current

(RB#)

IOL

(RB#)

VOL=0.1V

VOL=0.4V

Table 9: DC and Operating Characteristics

Parameter

Value

1.8Volt

3.3Volt

Input Pulse Levels

0V to Vcc

0.4V to 2.4V

Input Rise and Fall Times

5ns

Input and Output Timing Levels

Vcc / 2

1.5V

Output Load (1.7V - 1.95Volt & 2.7V - 3.6V)

1 TTL GATE and CL=30pF

1 TTL GATE and CL=50pF

Output Load (3.0V - 3.6V)

1 TTL GATE and CL=100pF

Table 10: AC Conditions

NOTE:

1. These parameters are applied to the errata.

HY27SF161G2M-VIP Datasheet(PDF) 19 Page - Hynix Semiconductor

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