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HY27SF161G2M-VIP Datasheet(PDF) 20 Page - Hynix Semiconductor

Part # HY27SF161G2M-VIP
Description  1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
PDF  48 Pages
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

HY27SF161G2M-VIP Datasheet(HTML) 20 Page - Hynix Semiconductor

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Rev 0.7 / Apr. 2005
20
Preliminary
HY27UF(08/16)1G2M Series
HY27SF(08/16)1G2M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Item
Symbol
Test Condition
Min
Max
Unit
Input / Output Capacitance (1)
CI/O
VIL=0V
-
10
pF
Input Capacitance(1)
CIN
VIN=0V
-
10
pF
Table 11: Pin Capacitance (TA=25C, F=1.0MHz)
Note: 1. For the stacked devices version the Input Capacitance is <TBD> and the I/O capacitance is <TBD>
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
tPROG
-
300
700
us
Dummy Busy Time for Cache Program
tCBSY
-3
700
us
Number of partial Program Cycles in the same page
Main Array
NOP
-
-
4
Cycles
Spare Array
NOP
-
-
4
Cycles
Block Erase Time
tBERS
-2
3
ms
Table 12: Program / Erase Characteristics



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