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HY27SF161G2M-VIP Datasheet(PDF) 46 Page - Hynix Semiconductor |
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HY27SF161G2M-VIP Datasheet(HTML) 46 Page - Hynix Semiconductor |
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46 / 48 page ![]() Rev 0.7 / Apr. 2005 46 Preliminary HY27UF(08/16)1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash MARKING INFORMATION Packag M arking Exam ple FBG A K O R H Y 2 7 x F x x 1 G 2 M x x x x Y W W x x - hynix - K O R - H Y27xFxx1G 2M xxxx H Y: HYNIX 27: NAND Flash x: Pow er Supply F: Classification xx: Bit O rganization 1G : Density 2: Mode M : Version x: Package Type x: Package M aterial x: Operating Tem perature x: Bad Block - Y: Year (ex: 5= year 2005, 06= year 2006) - ww: W ork W eek (ex: 12= w ork w eek 12) - xx: Process Code Note - Capital Letter - Sm all Letter : Hynix Sym bol : O rigin Country : U(2.7V~ 3.6V), L(2.7V), S(1.8V) : Single Level Cell+ Single D ie+ Large Block : 08(x8), 16(x16) : 1Gbit : 1nCE & 1R/nB; Sequential Row Read D isable) : 1st Generation : F(63 FBGA) : Blank(N orm al), P(Lead Free) : C(0℃ ~70℃ ), E(-25℃ ~85℃ ) M (-30℃ ~85℃ ), I(-40℃ ~85℃ ) : B(Included Bad Block), S(1~ 5 Bad Block), P(All Good Block) : Fixed Item : N on-fixed Item : Part N um ber |
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