HY27SF161G2M-VIP datasheet(45/48 Pages) HYNIX

45 / 48 page

Rev 0.7 / Apr. 2005

Preliminary

HY27UF(08/16)1G2M Series

HY27SF(08/16)1G2M Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

MARKING INFORMATION

Packag

Markin g Exam ple

TSO P 1

WSO P

- hynix

- K O R

- H Y 27 xFxx1G 2 M xxxx

H Y : HYNIX

27: NAN D Flash

x: Pow er Supply

F: Classification

xx: Bit O rganization

1G : Density

2: Mode

M : Version

x: Package Type

x: Package M aterial

x: O perating Tem perature

x: Bad Block

- Y : Year (ex: 5= year 2005, 06= year 2006)

- ww: Work Week (ex: 12= w ork w eek 12)

- xx: Process Code

Note

- C apital Letter

- S m all Letter

: H ynix Sym bol

: O rigin Country

: U(2.7V~ 3.6V), L(2.7V), S(1.8V)

: Single Level Cell+ Single D ie+ Large Block

: 08(x8), 16(x16)

: 1G bit

: 1nCE & 1R /nB ; Sequential Row Read D isable

: 1st G eneration

: T(48-TSO P1), V(48-W SO P)

: Blank(N orm al), P(Lead Free)

: C(0℃ ~70℃ ), E(-25℃ ~85℃ )

M(-30℃ ~85℃ ), I(-40℃ ~85℃ )

: B(Included Bad Block), S(1~ 5 Bad Block),

P(All G ood Block)

: Fixed Item

: N on-fixed Item

: Part N um ber

HY27SF161G2M-VIP Datasheet(PDF) 45 Page - Hynix Semiconductor

HY27SF161G2M-VIP Datasheet(HTML) 45 Page - Hynix Semiconductor

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