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AT25SF321 Datasheet(PDF) 11 Page - Dialog Semiconductor

Part # AT25SF321
Description  32-Mbit, 2.5V Minimum SPI Serial Flash Memory with Dual-I/O and Quad-IO Support
PDF  48 Pages
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Manufacturer  DIALOG [Dialog Semiconductor]
Direct Link  http://www.dialog-semiconductor.com/
Logo DIALOG - Dialog Semiconductor

AT25SF321 Datasheet(HTML) 11 Page - Dialog Semiconductor

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AT25SF321
DS-25SF321–047F–8/2017
6.3
Dual-I/O Read Array (BBh)
The Dual-I/O Read Array command is similar to the Dual-Output Read Array command and can be used to sequentially
read a continuous stream of data from the device by simply providing the clock signal once the initial starting address
with two bits of address on each clock and two bits of data on every clock cycle.
The Dual-I/O Read Array command can be used at any clock frequency, up to the maximum specified by fRDDO. To
perform the Dual-I/O Read Array operation, the CS pin must first be asserted and then the opcode BBh must be clocked
into the device. After the opcode has been clocked in, the three address bytes must be clocked in to specify the location
of the first byte to read within the memory array. Following the three address bytes, a single mode byte must also be
clocked into the device.
After the three address bytes and the mode byte have been clocked in, additional clock cycles will result in data being
output on both the SO and SI pins. The data is always output with the MSB of a byte first and the MSB is always output
on the SO pin. During the first clock cycle, bit seven of the first data byte is output on the SO pin, while bit six of the same
data byte is output on the SI pin. During the next clock cycle, bits five and four of the first data byte are output on the SO
and SI pins, respectively. The sequence continues with each byte of data being output after every four clock cycles.
When the last byte (3FFFFFh) of the memory array has been read, the device will continue reading from the beginning of
the array (000000h). No delays will be incurred when wrapping around from the end of the array to the beginning of the
array.Deasserting the CS pin will terminate the read operation and put the SO and SI pins into a high-impedance state.
The CS pin can be deasserted at any time and does not require that a full byte of data be read.
Figure 6-4. Dual I/O Read Array (Initial command or previous M5, M4
≠1,0)
6.3.1
Dual-I/O Read Array (BBh) with Continuous Read Mode
The Fast Read Dual I/O command can further reduce instruction overhead through setting the Continuous Read Mode
bits (M7-0) after the input Address bits (A23-0), as shown in Figure 6-5. The upper nibble of the (M7-4) controls the
length of the next Fast Read Dual I/O command through the inclusion or exclusion of the first byte instruction code. The
lower nibble bits of the (M3-0) are don't care ("x"). However, the IO pins should be high-impedance prior to the falling
edge of the first data out clock. If the "Continuous Read Mode" bits M5-4 = (1,0), then the next Fast Read Dual I/O
command (after CS is raised and then lowered) does not require the BBH instruction code, as shown in Figure 15. This
reduces the command sequence by eight clocks and allows the Read address to be immediately entered after CS is
asserted low. If the "Continuous Read Mode" bits M5-4 do not equal to (1,0), the next command (after CS is raised and
then lowered) requires the first byte instruction code, thus returning to normal operation. A Continuous Read Mode Reset
command can also be used to reset (M7-0) before issuing normal commands.
I/O0
(SI)
SCK
I/O1
(SO)
CS
MSB
MSB
23
1
0
10111011
67
5
410 11
9
812
23
21 22
19 20
Opcode
A22 A20 A18 A16
A0 M6 M4
A14 A
Address Bits
A23-A16
M3
M2
M1
M0
Address Bits
A15-A8 A7-A0
M7-M0
MSB
A23 A21 A19 A17
A1 M7 M5
A15 A
27
25 26
24
D6 D4
D3
D2
D1
D0
Byte 1
D7 D5
D6
D7
Byte 2



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