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LPC55S2X Datasheet(PDF) 71 Page - NXP Semiconductors |
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LPC55S2X Datasheet(HTML) 71 Page - NXP Semiconductors |
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71 / 132 page ![]() NXP Semiconductors LPC55S2x/LPC552x 32-bit Arm Cortex®-M33 microcontroller [3] VDD present or not present. Compliant with the I2C-bus standard. 5.5 V can be applied to this pin when VDD is powered down. [4] An ADC input voltage above 3.6 V can be applied for a short time without leading to immediate, unrecoverable failure. Accumulated exposure to elevated voltages at 4.6 V must be less than 106 s total over the lifetime of the device. Applying an elevated voltage to the ADC inputs for a long time affects the reliability of the device and reduces its lifetime. [5] It is recommended to connect an overvoltage protection diode between the analog input pin and the voltage supply pin. [6] Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor. 9 Thermal characteristics The average chip junction temperature, Tj (°C), can be calculated using the following equation: (1) • Tamb = ambient temperature (°C), • Rth(j-a) = the package junction-to-ambient thermal resistance (°C/W) • PD = sum of internal and I/O power dissipation The internal power dissipation is the product of IDD and VDD. The I/O power dissipation of the I/O pins is often small and many times can be negligible. However it can be significant in some applications. Symbol Parameter Conditions Max/Min Unit HLQFP100 Package Rth(j-a) thermal resistance from junction to ambient [1] JESD51-9, 2s2p[2] 27 °C/W Rth(j-c) thermal resistance from junction to case [3] JESD51-9[2] 2.0 °C/W VFBGA98 Package Rth(j-a) thermal resistance from junction to ambient [1] JESD51-9, 2s2p[2] 56 °C/W Rth(j-c) Junction-to-Top of Package Thermal Characterization Parameter [3] JESD51-9[2] 0.7 °C/W HTQFP 64 Package Rth(j-a) thermal resistance from junction to ambient [1] JESD51-9, 2s2p[2] 28 °C/W Rth(j-c) thermal resistance from junction to case [3] JESD51-9[2] 0.3 °C/W Table 11. Thermal resistance [1] Determined in accordance to JEDEC JESD51-2A natural convection environment. Thermal resistance data in this report is solely for a thermal performance comparison of one package to another in a standardized specified environment. It is not meant to predict the performance of a package in an application-specific environment [2] Thermal test board meets JEDEC specification for this package (JESD51-9). [3] Junction-to-Case thermal resistance determined using an isothermal cold plate. Case is defined as the bottom of the packages (exposed pad) Symbol Parameter Conditions Max Unit Tjmax (Device) maximum junction temperature for Device Device operating per datasheet spec + 107 °C Tjmax (Silicon Process) maximum junction temperature for Silicon Process Device operating, datasheet specifications not guaranteed + 125 °C Table 12. Maximum Junction Temperature LPC55S2X_LPC552X All information provided in this document is subject to legal disclaimers. © 2024 NXP B.V. All rights reserved. Data sheet Rev. 2.3 — 29 August 2024 Document feedback 71 / 132 |
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