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LPC55S2X Datasheet(PDF) 71 Page - NXP Semiconductors

Part # LPC55S2X
Description  32-bit Arm Cortex®-M33 microcontroller
PDF  132 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

LPC55S2X Datasheet(HTML) 71 Page - NXP Semiconductors

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NXP Semiconductors
LPC55S2x/LPC552x
32-bit Arm Cortex®-M33 microcontroller
[3]
VDD present or not present. Compliant with the I2C-bus standard. 5.5 V can be applied to this pin when VDD is powered down.
[4]
An ADC input voltage above 3.6 V can be applied for a short time without leading to immediate, unrecoverable failure. Accumulated exposure to elevated
voltages at 4.6 V must be less than 106 s total over the lifetime of the device. Applying an elevated voltage to the ADC inputs for a long time affects the
reliability of the device and reduces its lifetime.
[5]
It is recommended to connect an overvoltage protection diode between the analog input pin and the voltage supply pin.
[6]
Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor.
9 Thermal characteristics
The average chip junction temperature, Tj (°C), can be calculated using the following equation:
(1)
• Tamb = ambient temperature (°C),
• Rth(j-a) = the package junction-to-ambient thermal resistance (°C/W)
• PD = sum of internal and I/O power dissipation
The internal power dissipation is the product of IDD and VDD. The I/O power dissipation of the I/O pins is often
small and many times can be negligible. However it can be significant in some applications.
Symbol
Parameter
Conditions
Max/Min
Unit
HLQFP100 Package
Rth(j-a)
thermal resistance from junction to
ambient [1]
JESD51-9, 2s2p[2]
27
°C/W
Rth(j-c)
thermal resistance from junction to
case [3]
JESD51-9[2]
2.0
°C/W
VFBGA98 Package
Rth(j-a)
thermal resistance from junction to
ambient [1]
JESD51-9, 2s2p[2]
56
°C/W
Rth(j-c)
Junction-to-Top of Package Thermal
Characterization Parameter [3]
JESD51-9[2]
0.7
°C/W
HTQFP 64 Package
Rth(j-a)
thermal resistance from junction to
ambient [1]
JESD51-9, 2s2p[2]
28
°C/W
Rth(j-c)
thermal resistance from junction to
case [3]
JESD51-9[2]
0.3
°C/W
Table 11. Thermal resistance
[1]
Determined in accordance to JEDEC JESD51-2A natural convection environment. Thermal resistance data in this report is solely for a thermal
performance comparison of one package to another in a standardized specified environment. It is not meant to predict the performance of a package in an
application-specific environment
[2]
Thermal test board meets JEDEC specification for this package (JESD51-9).
[3]
Junction-to-Case thermal resistance determined using an isothermal cold plate. Case is defined as the bottom of the packages (exposed pad)
Symbol
Parameter
Conditions
Max
Unit
Tjmax (Device)
maximum junction temperature for
Device
Device operating per datasheet spec
+ 107
°C
Tjmax (Silicon Process) maximum junction temperature for
Silicon Process
Device operating, datasheet specifications
not guaranteed
+ 125
°C
Table 12. Maximum Junction Temperature
LPC55S2X_LPC552X
All information provided in this document is subject to legal disclaimers.
© 2024 NXP B.V. All rights reserved.
Data sheet
Rev. 2.3 — 29 August 2024
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