STM32L4S5AI datasheet(145/275 Pages) STMICROELECTRONICS

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IDD (wakeup

from Standby)

Supply current during wakeup

from Standby mode

Wakeup clock

is MSI = 4

MHz(5)

3 V

2.0

1. Guaranteed by characterization results, unless otherwise specified.

2. Guaranteed by test in production.

3. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.

4. The supply current in Standby with SRAM2 mode is:

IDD_ALL(Standby) + IDD_ALL(SRAM2). The supply current in Standby with RTC with SRAM2 mode is:

IDD_ALL(Standby + RTC) + IDD_ALL(SRAM2).

5. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 44: Low-power mode wakeup timings.

Table 40. Current consumption in Standby mode (continued)

Symbol

Parameter

Conditions

TYP

MAX(1)

Unit

VDD

25°C

55°C

85°C 105°C 125°C 25°C 55°C 85°C 105°C

125°C

Table 41. Current consumption in Shutdown mode

Symbol

Parameter

Conditions

TYP

MAX(1)

Unit

VDD

25°C

55°C

85°C

105°C

125°C

25°C

55°C

85°C

105°C

125°C

IDD

(Shutdown)

Supply current

in Shutdown

mode (backup

registers

retained) RTC

disabled

1.8 V

33.0

205

1250

3650

10500

150

620

3800

12000

35000

2.4 V

43.0

250

1450

4300

12000

170

740

4400

14000

39000

3 V

60.0

320

1850

5450

15500

190

920

5200

16000

45000

3.6 V

92.0

430

2300

6700

18500

270

1200

6200

19000

51000

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