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STM32L4S5AI Datasheet(PDF) 147 Page - STMicroelectronics |
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STM32L4S5AI Datasheet(HTML) 147 Page - STMicroelectronics |
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147 / 275 page ![]() Table 42. Current consumption in VBAT mode Symbol Parameter Conditions TYP MAX(1) Unit - VBAT 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C IDD(VBAT) Backup domain supply current RTC disabled 1.8 V 3.00 27.0 165 495 1350 8.0 67.0 390 1200 3000 nA 2.4 V 4.00 31.0 190 560 1550 10.0 76.0 440 1300 3300 3 V 6.00 43.0 255 750 2000 13.0 91.0 510 1500 3800 3.6 V 14.0 83.0 485 1450 4050 34.0 200 1100 3100 8300 RTC enabled and clocked by LSE bypassed at 32768 Hz 1.8 V 215 240 390 730 ----- - 2.4 V 305 340 510 900 ----- - 3 V 415 455 680 1200 ----- - 3.6 V 540 595 925 1900 ----- - RTC enabled and clocked by LSE quartz(2) 1.8 V 305 345 510 865 1600 ---- - 2.4 V 395 440 625 1050 1800 ---- - 3 V 510 565 805 1350 2300 ---- - 3.6 V 650 740 1200 2200 4450 ---- - 1. Guaranteed by characterization results, unless otherwise specified. 2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors. |
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