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STM32L4S5AI Datasheet(PDF) 146 Page - STMicroelectronics |
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STM32L4S5AI Datasheet(HTML) 146 Page - STMicroelectronics |
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146 / 275 page ![]() IDD (Shutdown with RTC) Supply current in Shutdown mode (backup registers retained) RTC enabled RTC clocked by LSE bypassed at 32768 Hz 1.8 V 245 420 1450 3850 10500 - - - - - nA 2.4 V 340 555 1750 4600 12500 - - - - - 3 V 465 730 2250 5900 15500 - - - - - 3.6 V 615 945 2850 7250 19000 - - - - - RTC clocked by LSE quartz(2) in low drive mode 1.8 V 335 520 1550 4000 - - - - - - 2.4 V 435 650 1850 4750 - - - - - - 3 V 560 830 2350 6050 - - - - - - 3.6 V 730 1050 2950 7400 - - - - - - IDD(wakeup from Shutdown) Supply current during wakeup from Shutdown mode Wakeup clock is MSI = 4 MHz(3) 3 V 0.5 - - - - --- -- mA 1. Guaranteed by characterization results, unless otherwise specified. 2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors. 3. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 44: Low-power mode wakeup timings. Table 41. Current consumption in Shutdown mode (continued) Symbol Parameter Conditions TYP MAX(1) Unit - VDD 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C |
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