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RP112K151B Datasheet(PDF) 6 Page - Nisshinbo Micro Devices Inc. |
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RP112K151B Datasheet(HTML) 6 Page - Nisshinbo Micro Devices Inc. |
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6 / 35 page ![]() RP112x No. EA-258-250325 6 ELECTRICAL CHARACTERISTICS (continued) Unless otherwise noted, VIN = 5.25 V (VOUT ≥ 4.1 V), VIN = Set VOUT + 1.0 V (1.5 V < VOUT < 4.1 V), VIN = 2.5 V (VOUT ≤ 1.5 V), IOUT = 1 mA, CIN = COUT = 1.0 F The specifications surrounded by are guaranteed by design engineering at −40°C ≤ Ta ≤ 85°C. RP112xxxxB/D Electrical Characteristics (Ta = 25°C) Symbol Item Conditions Min. Typ. Max. Unit en Output Noise BW = 10 Hz to 100 kHz, IOUT = 30 mA 10 Vrms RLOW Auto-discharge Nch Tr. ON Resistance (RP112xxxxD only) VIN = 4.0 V, VCE = 0 V 60 All test categories were tested on the products under the pulse load condition (Tj ≈ Ta = 25°C) except Output Noise, Ripple Rejection, and Output Voltage Temperature Coefficient. The specifications surrounded by are guaranteed by design engineering at −40°C ≤ Ta ≤ 85°C. • Dropout Voltage (Ta = 25°C) Output Voltage VOUT (V) Dropout Voltage VDIF (V) Condition Typ. Max. 1.2V ≤ VOUT < 1.3V IOUT=150mA 0.39 0.80 1.3V ≤ VOUT < 1.4V 0.37 0.70 1.4V ≤ VOUT < 1.5V 0.34 0.60 1.5V ≤ VOUT < 1.7V 0.32 0.50 1.7V ≤ VOUT < 2.0V 0.29 0.41 2.0V ≤ VOUT < 2.5V 0.25 0.36 2.5V ≤ VOUT < 2.8V 0.22 0.31 2.8V ≤ VOUT ≤ 4.8V 0.20 0.28 |
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