| Electronic Components Datasheet Search |
|
RP112K151B Datasheet(PDF) 8 Page - Nisshinbo Micro Devices Inc. |
|
|
|||||||||||||||||||||||||||||
RP112K151B Datasheet(HTML) 8 Page - Nisshinbo Micro Devices Inc. |
|
8 / 35 page ![]() RP112x No. EA-258-250325 8 APPLICATION INFORMATION TYPICAL APPLICATIONS C1 RP112x VDD VOUT CE GND C2 VOUT CE Control External Components Symbol Description C1 (CIN) 1.0 µF, Ceramic Capacitor, GRM155B31A105KE15, MURATA C2 (COUT) 1.0 µF, Ceramic Capacitor, GRM155B31A105KE15, MURATA TECHNICAL NOTES Phase Compensation In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, use a 1.0 F or more capacitor C2. In case of using a tantalum capacitor, the output may be unstable due to inappropriate ESR. Therefore, the full range of operating conditions for the capacitor in the application should be considered. PCB Layout The high impedances of VDD and GND could be a reason for the noise pickup and unstable operation. Therefore, it is imperative that the impedances of VDD and GND be the lowest possible. Also, place a 1.0 µF or more capacitor (C1) between VDD pin and GND pin as close as possible to each other. As for C2 output capacitor that is used for phase compensation, place it between VOUT pin and GND as close as possible to each other (Refer to TYPICAL APPLICATIONS). |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |