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JS48F4400P0P3C0 Datasheet(PDF) 26 Page - Numonyx B.V |
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JS48F4400P0P3C0 Datasheet(HTML) 26 Page - Numonyx B.V |
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26 / 139 page ![]() Numonyx™ StrataFlash® Cellular Memory (M18) Datasheet April 2008 26 309823-10 4.2 Signal Descriptions, x16D Table 7: Signal Descriptions, x16D Non-Mux/AD-Mux; x16D AA/D-Mux (Sheet 1 of 4) Symbol Type Signal Descriptions Notes Address and Data Signals, Non-Mux A[MAX: 0] Input ADDRESS: Global device signals. Shared address inputs for all memory die during Read and Write operations. • 4-Gbit: AMAX = A27 • 2-Gbit: AMAX = A26 • 1-Gbit: AMAX = A25 • 512-Mbit: AMAX = A24 • 256-Mbit: AMAX = A23 • 128-Mbit: AMAX = A22 • A[12:0] are the row and A[9:0] are the column addresses for 512-Mbit LPSDRAM. • A[12:0] are the row and A[8:0] are the column addresses for 256-Mbit LPSDRAM. • A[11:0] are the row and A[8:0] are the column addresses for 128-Mbit LPSDRAM. Unused address inputs should be treated as RFU. 1 DQ[15:0] Input/ Output DATA INPUT/OUTPUTS: Global device signals. DQ[15:0] are used to input commands and write-data during Write cycles, and to output read- data during Read cycles. During NAND accesses, DQ[7:0] are used to input commands, address- data, and write-data, and to output read-data. Data signals are High-Z when the device is deselected or its output is disabled. F-ADV# Input FLASH ADDRESS VALID: Flash-specific signal; low-true input. During synchronous flash Read operations, the address is latched on the rising edge of F-ADV#, or on the first rising edge of F-CLK after F-ADV# goes low for devices that support up to 108 MHz, or on the last rising edge of F-CLK after F-ADV# goes low for devices that support up to 133 MHz. In an asynchronous flash Read operation, the address is latched on the rising edge of F-ADV# or continuously flows through while F-ADV# is low. Address and Data Signals, AD-Mux A[MAX:16] Input ADDRESS: Global device signals. Shared address inputs for all Flash and SRAM memory die during Read and Write operations. • 4-Gbit: AMAX = A27 • 2-Gbit: AMAX = A26 • 1-Gbit: AMAX = A25 • 512-Mbit: AMAX = A24 • 256-Mbit: AMAX = A23 • 128-Mbit: AMAX = A22 Unused address inputs should be treated as RFU. 1 AD[15:0] Input / Output ADDRESS-DATA MULTIPLEXED INPUTS/ OUTPUTS: AD-Mux flash and SRAM lower address and data signals; LPSDRAM data signals. During AD-Mux flash and SRAM Write cycles, AD[15:0] are used to input the lower address followed by commands or write-data. During AD-Mux flash Read cycles, AD[15:0] are used to input the lower address followed by read-data output. During LPSDRAM accesses, AD[15:0] are used to input commands and write-data during Write cycles or to output read-data during Read cycles. During NAND accesses, AD[7:0] are used to input commands, address, or write-data, and to output read-data. AD[15:0] are High-Z when the flash or SRAM is deselected or its output is disabled. A[15:0] Input RFU, except for DRAM. |
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