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UM1693 Datasheet(PDF) 45 Page - STMicroelectronics

Part # UM1693
Description  M0-7 standard high-side drivers hardware design guide
PDF  196 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

UM1693 Datasheet(HTML) 45 Page - STMicroelectronics

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UM1693
Protection against battery transients
195
Figure 24. Recommended GND network for ISO 7637-2 (2011) level IV
A second solution with an additional branch in parallel (R2 + low drop diode D) depends on
specific considerations. The Table 8 gives a suggestion according to the Hybrid device type
and to the logic level of Input pin adopted.
The given suggestion, based on some experimental measures, take into account a
minimum high state input voltage on Regulator's side and the maximum voltage drop on
15 k
Ω I/O series resistance.
This yields a maximum allowed GND voltage on the device's GND network for 5 V and 3.3 V
system.
•
R1 must be chosen taking into account the two following limits:
–
Minimum value is chosen according to the signal clamp structure energy capability
and maximum power dissipation allowed inside the component (the lower is the
resistance value the higher is the Power dissipated during the pulses)
–
Maximum value is chosen to guarantee PowerMOS operation in full RON during
reverse battery and a GND shift that guarantees device properly driven ON even
in the worst case device limits (relevant parameter to be taken into account at
Table 8. GND network proposals for Hybrids HSDs
Device/VREG supply voltage
Single/double channels
VN7007AH-E
VN7004AH-E
VND7012AY-E
Quad channels VNQ7040AY-E
5V
Assumption: max allowed GND
Shift: 1.67 V
Only R1: 150
Ω (value for each
driver)
R1 = 270
Ω // (low drop D +
series resistor R2 = 47
Ω) (value
for each driver)
Vz(D) > 150 V
3.3 V
Assumption: max allowed GND
Shift: 0.33 V
Only R1: 33
Ω (value for each
driver)
Only R1 = 18
Ω (value for each
driver)



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