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AN1882 Datasheet(PDF) 19 Page - STMicroelectronics |
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AN1882 Datasheet(HTML) 19 Page - STMicroelectronics |
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19 / 30 page ![]() AN1882 Application information Doc ID 10209 Rev 4 19/30 Equation 18 where RP and RN are the series resistance of the high side and low side MOSFETs respectively and RL the series resistance of the inductor. The conduction losses due to the ESR of the input and output capacitors are usually negligible, particularly when using ceramic caps (very low ESR). Anyway, in case of high ESR values for these caps, their conduction losses are: Equation 19 where ΔI is the current ripple flowing through the choke and D is the duty cycle of the application. The conduction losses are particularly important at high current cause they depends on its squared value. 5.2.2 Switching losses The switching losses are due to the turn on and off of the internal high side MOSFET. Equation 20 where TON and TOFF are the turn-on and turn-off times of the internal high side switch. These are approximately in the range of 15 ns to 20 ns.This loss is important at high frequency. 5.2.3 Gate charge losses The gate charge losses derive from switching the gate capacitance of the internal MOSFETs. The gate capacitances (CH for the high side MOSFETs and CL for the low side MOSFETs) are charged and discharged with the input voltage at the switching frequency. Equation 21 These losses are also directly proportional to the switching frequency and input voltage but are usually negligible compared with the conduction and switching losses. P MOS I O 2 R P D () R N 1D – () R L + ⋅ + ⋅ () ⋅ = P CIN COUT , I O 2 D1 D – () ⋅ () ESR CIN I 2 Δ 12 -------- ESR COUT ⋅ + ⋅⋅ = P SWITCHING V IN I O F SW T ON T OFF + () 2 ------------------------------------ ⋅⋅ ⋅ = P GATECHARGE V IN C H C L + () F SW ⋅⋅ = - |
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