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AN1882 Datasheet(PDF) 20 Page - STMicroelectronics |
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AN1882 Datasheet(HTML) 20 Page - STMicroelectronics |
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20 / 30 page ![]() Thermal considerations AN1882 20/30 Doc ID 10209 Rev 4 6 Thermal considerations Depending on the electrical application conditions (input voltage, switching frequency, and output current) and ambient temperature, the heat produced by device losses could increases the junction temperature over its absolute maximum rating. The following relation can estimate the junction temperature of the device: Equation 22 where TA is the ambient temperature of the application, RTH_JA is the thermal resistance junction to ambient of the package and PTOT is the overall power dissipated by the device. RTH_JA depends a little bit on the application board but it can approximately considered equal to 180 °C/W. PTOT is given by: Equation 23 Figure 12. Thermal performance results: VIN = 3.7 V VOUT = 1.8 V IOUT = 800 mA Figure 13. RDS(on) vs. temperature For a better estimation of the power dissipated it can be useful to consider the MOSFETs RDS(on) variation with the temperature, shown in the Figure 13. T J T A R THJA P TOT ⋅ + = - P TOT P MOS P SWIT CHING P GATECHARGE ++ = - |
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