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SPC563M64L7 Datasheet(PDF) 10 Page - STMicroelectronics |
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SPC563M64L7 Datasheet(HTML) 10 Page - STMicroelectronics |
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10 / 48 page ![]() Device overview SPC563Mxx 10/48 Doc ID 13850 Rev 6 3.2 Feature list ● Operating parameters – Fully static operation, 0 MHz – 80 MHz (plus 2% frequency modulation - 82 MHz) – –40 °C to 150 °C junction temperature operating range – Low power design Less than 400 mW power dissipation (nominal) Designed for dynamic power management of core and peripherals Software controlled clock gating of peripherals Low power stop mode, with all clocks stopped – Fabricated in 90 nm process – 1.2 V internal logic – Single power supply with 5.0 V −10% / +5% (4.5 V to 5.25 V) with internal regulator to provide 3.3 V and 1.2 V for the core – Input and output pins with 5.0 V −10% / +5% (4.5 V to 5.25 V) range 35%/65% VDDE CMOS switch levels (with hysteresis) Selectable hysteresis Selectable slew rate control – Nexus pins powered by 3.3 V supply – Designed with EMI reduction techniques Phase-locked loop Frequency modulation of system clock frequency On-chip bypass capacitance Selectable slew rate and drive strength ● High performance e200z335 core processor – 32-bit Power Architecture Book E programmer’s model – Variable Length Encoding Enhancements Allows Power Architecture instruction set to be optionally encoded in a mixed 16 and 32-bit instructions Results in smaller code size – Single issue, 32-bit Power Architecture technology compliant CPU – In-order execution and retirement – Precise exception handling – Branch processing unit Dedicated branch address calculation adder Branch acceleration using Branch Lookahead Instruction Buffer – Load/store unit One-cycle load latency Fully pipelined Big and Little Endian support Misaligned access support Zero load-to-use pipeline bubbles – Thirty-two 64-bit general purpose registers (GPRs) |
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