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LTM4686 Datasheet(PDF) 9 Page - Analog Devices |
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LTM4686 Datasheet(HTML) 9 Page - Analog Devices |
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9 / 132 page  LTM4681 9 Rev. 0 For more information www.analog.com ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the specified internal operating temperature range (Note 2). Specified as each individual output channel (Note 4). TA = 25°C, VIN = 12V, RUNn = 3.3V, RUNP = 0, FREQUENCY_SWITCH = 350kHz and VOUTn commanded to 1.000V unless otherwise noted. Configured with factory-default EEPROM settings and per Test Circuit 1, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS SVIN_THR VSVIN_nn Threshold to Enable VBIAS Switchover SVIN_nn Rising 7 7.5 V SVIN_THF VSVIN_nn Threshold to Disable VBIAS Switchover SVIN_nn Falling 6.5 V VDD33_nn Regulator VVDD33nn Internal VDD33 Voltage 4.5V < VINTVCC_nn 3.2 3.3 3.4 V ILIM VDD33 Current Limit VDD33_nn = GND, VIN_nn = INTVCC_nn = 4.5V 100 mA VVDD33_OV VDD33 Overvoltage Threshold 3.5 V VVDD33_UV VDD33 Undervoltage Threshold 3.1 V VDD25_nn Regulator VVDD25nn Internal VDD25 Voltage 2.5 V ILIM VDD25 Current Limit VDD25_nn = GND, VIN_nn = INTVCC_nn = 4.5V 80 mA Oscillator and Phase-Locked Loop (PLL) fRANGE PLL SYNC Range Synchronized with Falling Edge of SYNC l 250 1000 kHz fOSC Oscillator Frequency Accuracy Frequency Switch = 250kHz to 1000kHz (Note 15) l ±7.5 % VTH(SYNC_nn) SYNC Input Threshold VSYNC Falling VSYNC Rising 1 1.5 V V VOL(SYNC_nn) SYNC Low Output Voltage ILOAD = 3mA 0.2 0.4 V ILEAK(SYNC_nn) SYNC Leakage Current in Slave Mode 0V ≤ VPIN ≤ 3.6V ±5 µA θSYNC-θ0,-θ2 SYNC to Ch0, Ch2 Phase Relationship Based on the Falling Edge of Sync and Rising Edge of SW0, SW2 MFR_PWM_CONFIG[2:0] = 0,2,3 MFR_PWM_CONFIG[2:0] = 5 MFR_PWM_CONFIG[2:0] = 1 MFR_PWM_CONFIG[2:0]= 4,6 0 60 90 120 Deg Deg Deg Deg θSYNC-θ1,-θ3 SYNC to Ch1, Ch3 Phase Relationship Based on the Falling Edge of Sync and Rising Edge of SW1, SW3 MFR_PWM_CONFIG[2:0] = 3 MFR_PWM_CONFIG[2:0] = 0 MFR_PWM_CONFIG[2:0] = 2,4,5 MFR_PWM_CONFIG[2:0] = 1 MFR_PWM_CONFIG[2:0] = 6 120 180 240 270 300 Deg Deg Deg Deg Deg EEPROM Characteristics Endurance (Note 13) 0°C ≤ TJ ≤ 85°C During EEPROM Write Operations l 10,000 Cycles Retention (Note 13) TJ < 125°C l 10 Years Mass_Write Mass Write Operation Time STORE_USER_ALL, 0°C < TJ < 85°C During EEPROM Write Operation 440 4100 ms Leakage Current SDA_nn, SCL_nn, ALERT_nn, RUNn IOL Input Leakage Current OV ≤ VPIN ≤ 5.5V l ±5 µA Leakage Current FAULTn, PGOODn IGL Input Leakage Current OV ≤ VPIN ≤ 3.6V l ±2 µA Digital Inputs SCL_nn, SDA_nn, RUNn VIH Input High Threshold Voltage l 1.35 V VIL Input Low Threshold Voltage l 0.8 V VHYST Input Hysteresis SCL, SDA 0.08 V CPIN Input Capacitance 10 pF |
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