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MPC8280 Datasheet(PDF) 425 Page - Freescale Semiconductor, Inc |
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MPC8280 Datasheet(HTML) 425 Page - Freescale Semiconductor, Inc |
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425 / 1386 page ![]() Memory Controller MPC8280 PowerQUICC II Family Reference Manual, Rev. 1 Freescale Semiconductor 11-5 Figure 11-2. Memory Controller Machine Selection Some features are common to all machines. • A 17-bit most-significant address decode on each memory bank • The block size of each memory bank can vary between 32 Kbytes (1 Mbyte for SDRAM) and 4 Gbytes (128 Mbytes for SDRAM). • Normal parity may be generated and checked for any memory bank. • Read-modify-write parity may be generated and checked for any memory bank with either 32- or 64-bit port size. Using RMW parity on 32-bit port size bank, requires the bus to be in strict 60x mode (BCR[ETM] = 0. See Section 4.3.2.1, “Bus Configuration Register (BCR).” • ECC may be generated and checked for any memory bank with a 64-bit port size • Each memory bank can be selected for read-only or read/write operation. • Each memory bank can use data pipelining, which reduces the required data setup time for synchronous devices. • Each memory bank can be controlled by an external memory controller or bus slave. The memory controller functionality minimizes the need for glue logic in MPC8280-based systems. In Figure 11-3, CS0 is used with the 16-bit boot EPROM with BR0[MS] defaulting to select the GPCM. CS1 is used as the RAS signal for 64-bit DRAM with BR1[MS] configured to select UPMA. BS[0–7] are used as CAS signals on the DRAM. User-Programmable Local General-Purpose Bank 0 Bank 1 Bank 2 Bank 3 Bank 10 Bank11 MS MS MS MS MS MS Chip-Select Machine Local SDRAM Local 60x Local M xMR[BS] 60x SDRAM 60x Local 60x General-Purpose Chip-Select Machine 60x Machine (A/B/C) Machine Machine |
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