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MPC8280 Datasheet(PDF) 445 Page - Freescale Semiconductor, Inc |
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MPC8280 Datasheet(HTML) 445 Page - Freescale Semiconductor, Inc |
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445 / 1386 page ![]() Memory Controller MPC8280 PowerQUICC II Family Reference Manual, Rev. 1 Freescale Semiconductor 11-25 SDRAM Device–Specific Parameters: 14–16 RFRC Refresh recovery. Defines the earliest timing for an activate command after a REFRESH command. Sets the refresh recovery interval in clock cycles. See Section 11.4.6.6, “Refresh Recovery Interval (RFRC),” for how to set this field. 000 Reserved 001 3 clocks 010 4 clocks 011 5 clocks 100 6 clocks 101 7 clocks 110 8 clocks 111 16 clocks 17–19 PRETOACT Precharge to activate interval. Defines the earliest timing for ACTIVATE or REFRESH command after a precharge command. See Section 11.4.6.1, “Precharge-to-Activate Interval.” 001 1 clock-cycle wait states 010 2 clock-cycle wait states ... 111 7 clock-cycle wait states 000 8 clock-cycle wait states 20–22 ACTTORW Activate to read/write interval. Defines the earliest timing for READ/WRITE command after an ACTIVATE command. See Section 11.4.6.2, “Activate to Read/Write Interval.” 001 1 clock cycle 010 2 clock cycles ... 111 7 clock cycles 000 8 clock cycles 23 BL Burst length 0 SDRAM burst length is 4. Use this value if the device port size is16 1 SDRAM burst length is 8. Use this value if the device port size is 32 or 8 24–25 LDOTOPRE Last data out to precharge. Defines the earliest timing for PRECHARGE command after the last data was read from the SDRAM. See Section 11.4.6.4, “Last Data Out to Precharge.” 00 0 clock cycles 01 -1 clock cycle 10 -2 clock cycles 11 Reserved 26–27 WRC Write recovery time. Defines the earliest timing for PRECHARGE command after the last data is written to the SDRAM. See Section 11.4.6.5, “Last Data In to Precharge—Write Recovery.” 01 1 clock cycles 10 2 clock cycles 11 3 clock cycles 00 4 clock cycles Table 11-9. LSDMR Field Descriptions (continued) Bits Name Description |
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