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MPC8280 Datasheet(PDF) 459 Page - Freescale Semiconductor, Inc |
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MPC8280 Datasheet(HTML) 459 Page - Freescale Semiconductor, Inc |
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459 / 1386 page ![]() Memory Controller MPC8280 PowerQUICC II Family Reference Manual, Rev. 1 Freescale Semiconductor 11-39 • Refresh recovery interval (P/LSDMR[RFRC]). See Section 11.4.6.6, “Refresh Recovery Interval (RFRC).” • External address multiplexing present (P/LSDMR[EAMUX]). See Section 11.4.6.7, “External Address Multiplexing Signal.” • External buffers on the control lines present (P/LSDMR[BUFCMD]). See Section 11.4.6.8, “External Address and Command Buffers (BUFCMD).” The following sections describe the SDRAM parameters that are programmed in the P/LSDMR register. 11.4.6.1 Precharge-to-Activate Interval As demonstrated in Figure 11-20, this parameter, controlled by P/LSDMR[PRETOACT] defines the earliest timing for activate or refresh command after a precharge command. Figure 11-20. PRETOACT = 2 (2 Clock Cycles) 11.4.6.2 Activate to Read/Write Interval As represented in Figure 11-21, this parameter, controlled by P/LSDMR[ACTTORW], defines the earliest timing for READ/WRITE command after an ACTIVATE command. CLK ALE CS SDRAS SDCAS WE DQM PRECHARGE Command ACTIVATE MA11 MA10 MA[0–9] RAy RAy Bank A Command Bank A PRETOACT = 2 |
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