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PIC16F1933-E/P Datasheet(PDF) 328 Page - Microchip Technology |
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PIC16F1933-E/P Datasheet(HTML) 328 Page - Microchip Technology |
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328 / 418 page ![]() PIC16F193X/LF193X DS41364A-page 326 Preliminary © 2008 Microchip Technology Inc. 23.1.4 READING THE FLASH PROGRAM MEMORY To read a program memory location, the user must: 1. Write the Least and Most Significant address bits to the EEADRL and EEADRH registers. 2. Clear the CFGS bit of the EECON1 register. 3. Set the EEPGD control bit of the EECON1 register. 4. Then, set control bit RD of the EECON1 register. Once the read control bit is set, the program memory Flash controller will use the second instruction cycle to read the data. This causes the second instruction immediately following the “BSF EECON1,RD” instruction to be ignored. The data is available in the very next cycle, in the EEDATL and EEDATH registers; therefore, it can be read as two bytes in the following instructions. EEDATL and EEDATH registers will hold this value until another read or until it is written to by the user. EXAMPLE 23-3: FLASH PROGRAM READ Note 1: The two instructions following a program memory read are required to be NOPs. This prevents the user from executing a two-cycle instruction on the next instruction after the RD bit is set. 2: Data EEPROM can be read regardless of the setting of the CPD bit. BANKSEL EEADRL ; MOVLW MS_PROG_EE_ADDR ; MOVWF EEADRH ;MS Byte of Program Address to read MOVLW LS_PROG_EE_ADDR ; MOVWF EEADRL ;LS Byte of Program Address to read BANKSEL EECON1 ; BSF EECON1, EEPGD ;Point to PROGRAM memory BSF EECON1, RD ;EE Read ; ;First instruction after BSF EECON1,RD executes normally NOP NOP ;Any instructions here are ignored as program ;memory is read in second cycle after BSF EECON1,RD ; BANKSEL EEDATL ; MOVF EEDATL, W ;W = LS Byte of Program Memory MOVWF LOWPMBYTE ; MOVF EEDATH, W ;W = MS Byte of Program EEDATL MOVWF HIGHPMBYTE ; BCF STATUS, RP1 ;Bank 0 |
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