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CC1111F32RSP Datasheet(PDF) 87 Page - Texas Instruments

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Part # CC1111F32RSP
Description  Low-Power SoC (System-on-Chip) with MCU, Memory, Sub-1 GHz RF Transceiver, and USB Controller
PDF  247 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

CC1111F32RSP Datasheet(HTML) 87 Page - Texas Instruments

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CC1110Fx / CC1111Fx
SWRS033G
Page 87 of 244
The steps required to start a CPU flash write
operation are shown in Figure 23. Note that
code must be run from RAM in unified memory
space.
Figure 23: CPU Flash Write Executed from RAM
Figure 24. Flash Write Timeout
12.3.3
Flash Page Erase
After a flash page erase, all bytes in the
erased page are set to 1.
A
page
erase
is
initiated
by
setting
FCTL.ERASE
to 1. The page addressed by
FADDRH[5:1]
is erased when a page erase is
initiated. Note that if a page erase is initiated
simultaneously
with
a
page
write,
i.e.
FCTL.WRITE
is set to 1, the page erase will be
performed before the page write operation.
The FCTL.BUSY bit can be polled to see when
the page erase has completed.
The steps required to perform a flash page
erase from within flash memory are outlined in
Figure 25.
Note that, while executing program code from
within flash memory, when a flash erase or
write operation is initiated, program execution
Note:
If
flash
erase
operations
are
performed from within flash memory and
the watchdog timer is enabled, a watchdog
timer interval must be selected that is
longer than 20 ms, the duration of the flash
page erase operation, so that the CPU will
manage to clear the watchdog timer.



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