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AN4192 Datasheet(PDF) 19 Page - STMicroelectronics |
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AN4192 Datasheet(HTML) 19 Page - STMicroelectronics |
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19 / 47 page ![]() AN4192 High-side MOSFET selection Doc ID 023820 Rev 1 19/47 Figure 20. Efficiency comparison @ Vout = 1.26 V The “asymmetric gate driving” approach can be used to reduce voltage stresses on the phase node without detrimental effects on the converter efficiency. The drawbacks are the number of devices (one resistor + one Schottky diode) and the cost increase. AM16464V1 |
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