MSP430F449IPZ datasheet(49/85 Pages) TI

49 / 85 page

MSP430x43x, MSP430x44x

MIXED SIGNAL MICROCONTROLLER

SLAS344A – JANUARY 2002 – REVISED FEBRUARY 2002

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

recommended operating conditions

MIN

NOM

MAX

UNITS

Supply voltage during program execution,

VCC (AVCC = DVCC2 = VCC)

MSP430F43x,

MSP430F44x

1.8

3.6

Supply voltage during flash memory programming, VCC

(AVCC = DVCC2 = VCC)

MSP430F43x,

MSP430F44x

2.7

3.6

Supply voltage during program execution, SVS enabled (see

Note 1),

VCC (VCC = DVCC = VCC)

MSP430F43x,

MSP430F44x

3.6

Supply voltage, VSS

Operating free-air temperature range, TA

MSP430x43x

MSP430x44x

–40

°C

LF selected,

XTS_FLL=0

Watch crystal

32.768

kHz

LFXT1 crystal frequency, f(LFXT1)

(see Note 2)

XT1 selected,

XTS_FLL=1

Ceramic resonator

450

8000

kHz

(see Note 2)

XT1 selected,

XTS_FLL=1

Crystal

1000

8000

kHz

XT2 cr stal freq enc

Ceramic resonator

450

8000

XT2 crystal frequency, f(XT2)

Crystal

1000

8000

kHz

Processor freq enc (signal MCLK) f

VCC = 1.8 V

4.15

Processor frequency (signal MCLK), f(System)

VCC = 3.6 V

MHz

Flash-timing-generator frequency, f(FTG)

MSP430F43x,

MSP430F44x

257

476

kHz

Cumulative program time, t(CPT) (see Note 3)

VCC = 2.7 V/3.6 V

MSP430F43x

MSP430F44x

Mass erase time, t(MEras) (See also the flash memory, timing

generator, control register FCTL2 section, see Note 4)

VCC = 2.7 V/3.6 V

200

Low-level input voltage (TCK, TMS, TDI, RST/NMI), VIL

(excluding Xin, Xout)

VCC = 2.2 V/3 V

VSS

VSS + 0.6

High-level input voltage (TCK, TMS, TDI, RST/NMI), VIH

(excluding Xin, Xout)

VCC = 2.2 V/3 V

0.8

× VCC

VCC

Input levels at Xin and Xout

VIL(Xin, Xout)

VCC = 2.2 V/3 V

VSS

0.2

× VSS

Input levels at Xin and Xout

VIH(Xin, Xout)

0.8

× VCC

VCC

NOTES:

1. The minimum operating supply voltage is defined according to the trip point where POR is going active by decreasing the supply

voltage. POR is going inactive when the supply voltage is raised above the minimum supply voltage plus the hysteresis of the SVS

circuitry.

2. In LF mode, the LFXT1 oscillator requires a watch crystal. In XT1 mode, LFXT1 accepts a ceramic resonator or a crystal.

3. The cumulative program time must not be exceeded during a segment-write operation. This parameter is only relevant if segment

write option is used.

4. The mass erase duration generated by the flash timing generator is at least 11.1 ms. The cumulative mass erase time needed is

200 ms. This can be achieved by repeating the mass erase operation until the cumulative mass erase time is met (a minimum of

19 cycles may be required).

MSP430F449IPZ Datasheet(PDF) 49 Page - Texas Instruments

MSP430F449IPZ Datasheet(HTML) 49 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85

Datasheet Download

Link URL