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LC823450 Datasheet(PDF) 106 Page - ON Semiconductor |
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LC823450 Datasheet(HTML) 106 Page - ON Semiconductor |
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106 / 112 page ![]() LC823450 www.onsemi.com 106 THE GUIDANCE OF POWER SUPPLY CONTROL (RECOMMENDATION) Power supply control should keep at least one of the guidances below, and make sure no problem for mass production based on customer side evaluations. The Guidence in Terms of Power on Wave Form Power on wave form should keep the guidance below. Figure 59. No care 0 V 0.6 V or less More than 600 μs Power supply electric potential − 0.1 V When the voltage suddenly stands up at the time of power supply injection, please make the voltage to arrive at it less than 0.6 V. Please spend time beyond 600 μs and increase the voltage from the voltage which rose momentarily to the power supply electric potential – 0.1 V. When the voltage does not suddenly rise and stands up to power supply electric potential linearly, please spend time beyond 600 μs and increase the voltage from 0 V to the power supply electric potential. The Guidence in Terms of the Placement of Bypass Condenser Place bypass condenser 0.1 μF or more at the nearest point of each power supply pin, and place power circuit at the nearest point of power supply pin. Parasitic inductance L1 and L2 should be equal to or below the value described in the table below. In addition, as for the value of L1 of the WLP package, it becomes the value that added 4nH to value of L1 of the table. The inductance can be calculated from the width:W[mm], thickness: H[mm] and length: L[mm] of wiring on board, and affect layour of this LSI and bypass condenser. Refer to “The formula to calculate parasitic inductance” to calculate indactance. Figure 60. This LSI power circuit L1 Bypass capacitor L2 Table 60. TQFP (Pin No) WLP (Ball) PIN NAME L1 L2 Bypass Capacitor Power Supply Range 69 A2 VDD2 4 nH 50 nH 0.1 μF under 2 V case 1.5 nH 50 nH 0.1 μF equal 2 V or more case 75 A5 AVDDUSBPHY1 4 nH 80 nH 0.1 μF − |
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