| Electronic Components Datasheet Search |
|
259481A Marking, TPS259481AYWPR Datasheet(PDF) 46 Page - Texas Instruments |
|
||||||||||||||||||||||||||||||
TPS259481AYWPR Datasheet(HTML) 46 Page - Texas Instruments |
|
46 / 56 page ![]() • Protection devices such as TVS, snubbers, capacitors, or diodes must be placed physically close to the device they are intended to protect. These protection devices must be routed with short traces to reduce inductance. For example, a protection Schottky diode is recommended to address negative transients due to switching of inductive loads. It's also recommended to add a ceramic decoupling capacitor of 1 μF or greater between OUT and GND. These components must be physically close to the OUT pins. Care must be taken to minimize the loop area formed by the Schottky diode/bypass-capacitor connection, the OUT pin and the GND terminal of the IC. 9.9.2 Layout Example Inner GND layer Top Power layer IN OUT IN OUT Bo om Power layer 1 Figure 9-24. Layout Example TPS25948 SLVSGT9A – FEBRUARY 2023 – REVISED SEPTEMBER 2023 www.ti.com 46 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: TPS25948 |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |