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LPC5410X Datasheet(PDF) 47 Page - NXP Semiconductors |
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LPC5410X Datasheet(HTML) 47 Page - NXP Semiconductors |
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47 / 95 page ![]() LPC5410x All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product data sheet Rev. 2.11 — 19 September 2019 47 of 95 NXP Semiconductors LPC5410x 32-bit ARM Cortex-M4/M0+ microcontroller [1] Typical ratings are not guaranteed. Typical values listed are at room temperature (25 C). [2] Characterized through bench measurements using typical samples. VDD = 3.3 V [3] Tested in production, VDD = 3.6 V Table 13. Static characteristics: Power consumption in deep sleep, power down, and deep power-down modes Tamb = 40 C to +105 C, 2.7 V . VDD 3.6 V; unless otherwise specified. Symbol Parameter Conditions Min Typ[1][2] Max[3] Unit IDD supply current Deep sleep mode; all SRAM on: Tamb = 25 C [2] - 306 480 A Tamb = 105 C - - 2.3 mA Power down mode; first 8 kB in SRAM0 powered: Tamb = 25 C [2] -5 10 A Tamb = 105 C- - 115 A SRAM0 (64 kB) powered - 7.3 - A SRAM0 (64 kB), SRAM1 (32 kB) powered - 8.6 - A SRAM0 (64 kB), SRAM1 (32 kB), SRAM2 (8 kB) powered -9 - A Deep power-down mode; RTC oscillator input grounded (RTC oscillator disabled) Tamb = 25 C [2] - 200 570 nA Tamb = 105 C- 20 A RTC oscillator running with external crystal - 280 - nA |
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