PIMXRT516SCVJ2A datasheet(26/128 Pages) NXP

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i.MX RT1170 Crossover Processors Data Sheet for Consumer Products, Rev. 1, 05/2021

NXP Semiconductors

Electrical characteristics

4.1.2

Thermal characteristics

Table 10 displays the 14 x 14 mm package thermal characteristics.

4.1.3

Operating ranges

Table 11 provides the operating ranges of the i.MX RT1170 processors. For details on the chip's power

structure, see the “Power Management Unit (PMU)” chapter of the i.MX RT1170 Reference Manual

(IMXRT1170RM).

1 Determined according to JEDEC Standard JS001, Electrostatic Discharge (ESD) Sensitivity Testing Human Body Model

(HBM).

2 Determined according to JEDEC Standard JS002, Field-Induced Charged-Device Model Test Method for

Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components.

3 Determined according to JEDEC Standard JESD78, IC Latch-up Test.

Table 10. 14 x 14 mm thermal characteristics

Rating

Board Type1

1 Thermal test board meets JEDEC specification for this package (JESD51-9).

Symbol

Value

Unit

Junction to Ambient Thermal Resistance2

2 Determined in accordance to JEDEC JESD51-2A natural convection environment. Thermal resistance data in this report is

solely for a thermal performance comparison of one package to another in a standardized specified environment. It is not

meant to predict the performance of a package in an application-specific environment.

JESD51-9, 2s2p

RJA3

3 RJA = (Tj - Ta)/P [unit: oC/W], where Tj = junction temperature, Ta = ambient temperature, P = device power.

31.6

oC/W

Junction to Top of Package

Thermal Characterization Parameter2

JESD51-9, 2s2p

JT4

4 JT = (Tj - Tt)/P [unit: oC/W], where Tj = junction temperature, Tt = temperature at top of package, P = device power.

1.4

oC/W

Junction to Case Thermal Resistance5

5 Junction-to-Case thermal resistance determined using an isothermal cold plate. Case temperature is taken at the package top

side centre surface temperature.

JESD51-9, 1s

RJC6

6 RJC = (Tj - Tc)/P [unit: oC/W], where Tj = junction temperature, Tc = case temperature, P = device power.

oC/W

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