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ADP5360ACBZ-2-R7 Datasheet(PDF) 4 Page - Analog Devices |
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ADP5360ACBZ-2-R7 Datasheet(HTML) 4 Page - Analog Devices |
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4 / 60 page ![]() ADP5360 Data Sheet Rev. 0 | Page 4 of 60 SPECIFICATIONS BATTERY CHARGER SPECIFICATIONS TJ = −40°C to +85°C, voltage of the VBUS pin (VVBUS) = 5.0 V, voltage of the ISOB pin (VISOB) = 3.8 V, C1 = 2.2 μF, C2 = 1 μF, C3 = C4 = 10 μF (see Figure 60), and all registers are at default values, unless otherwise noted. Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit GENERAL PARAMETERS Undervoltage Lockout (UVLO) VUVLO Rising threshold, voltage of the ISOB pin, VVBUS = 0 V 2.1 2.15 V Falling threshold, voltage of the ISOB pin, VVBUS = 0 V 1.8 1.88 V Input Current Limit ILIM ILIM = 100 mA 95 100 mA Operation Current VBUS Consumption IQ_BUS Charger, fuel gauge, buck, and buck boost enabled, no charge current 1.5 2 mA Battery Consumption IQ_PRO Enable battery protection only, VVBUS = 0 V 0.25 1.8 μA IQ_FG_ACT Fuel gauge, active mode, VVBUS = 0 V 3.5 5 μA IQ_FG_SLEEP Fuel gauge, sleep mode, VVBUS = 0 V 0.2 0.85 μA IQ_REG Enable buck and buck boost, VVBUS = 0 V 0.34 1 μA IQ_DISALL All disabled, VVBUS = 0 V 150 450 nA IQ_SHIP Shipment mode, TJ = 25°C 10 50 nA Shipment mode, TJ = −40°C to +85°C 310 nA CHARGING PARAMETERS Fast Charge Constant Current Mode ICHG ICHG = 100 mA 94 100 106 mA Accuracy1 ICHG = 10 mA to 320 mA, TJ = 0°C to 85°C −15 +15 % Charge Current Trickle1 ITRK_DEAD ITRK_DEAD = 5 mA, TJ = 0°C to 85°C 4 5 6 mA Weak ICHG_WEAK ITRK_DEAD + ICHG mA Trickle to Weak Charge Threshold1 VTRK_DEAD VTRK_DEAD = 2.5 V 2.41 2.5 2.57 V Hysteresis ΔVTRK_DEAD 100 mV Weak to Fast Charge Threshold1 VWEAK VWEAK = 3.0 V 2.88 3.0 3.08 V Hysteresis ΔVWEAK 100 mV Battery Termination Voltage VTRM Termination Voltage Accuracy1 VTRM = 4.2 V on the BSNS pin, TJ = 25°C 4.18 4.200 4.22 V VTRM = 4.2 V, on the BSNS pin, TJ = 0°C to 85°C −1 +1 % Charge Complete Current1 IEND IEND = 5 mA, TJ = 0°C to 85°C 2 5 8 mA Recharge Voltage Differential1 VRCH 120 mV BATTERY ISOLATION FET ISOFET Resistance Between ISOB and VSYS RDSON_ISO VVBUS = 0 V, current of the ISOB pin (IISOB) = 100 mA 145 220 mΩ LOW DROPOUT (LDO) AND HIGH VOLTAGE BLOCKING FET Regulated System Voltage1 VSYS_REG VTRM = 4.2 V, VSYSTEM = VTRM + 200 mV 4.4 V High Voltage Blocking FET On Resistance RDSON_HV IVBUS = 100 mA 550 820 mΩ Input Operating Voltage Range VVBUS 4.1 6.8 V Good Threshold VVBUS_OK Rising VVBUS_OK_RISE 3.9 4.0 V Falling VVBUS_OK_FALL 3.5 3.6 V Overvoltage Threshold VVBUS_OV Rising VVBUS_OV_RISE 6.8 7.0 V Falling VVBUS_OV_FALL 6.4 6.6 V |
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