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STM8L051F3 Datasheet(PDF) 55 Page - STMicroelectronics |
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STM8L051F3 Datasheet(HTML) 55 Page - STMicroelectronics |
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55 / 96 page ![]() DS9178 Rev 4 55/96 STM8L051F3 Electrical parameters 87 In the following table, data is based on characterization results, unless otherwise specified. Figure 10. Typ. IDD(LPR) vs. VDD (LSI clock source) Table 19. Total current consumption and timing in Low power run mode at VDD = 1.8 V to 3.6 V Symbol Parameter Conditions(1) Typ Max Unit IDD(LPR) Supply current in Low power run mode LSI RC osc. (at 38 kHz) all peripherals OFF TA = -40 °C to 25 °C 5.1 5.4 μA TA = 55 °C 5.7 6 TA = 85 °C 6.8 7.5 with TIM2 active(2) TA = -40 °C to 25 °C 5.4 5.7 TA = 55 °C 6.0 6.3 TA = 85 °C 7.2 7.8 LSE (3) external clock (32.768 kHz) all peripherals OFF TA = -40 °C to 25 °C 5.25 5.6 TA = 55 °C 5.67 6.1 TA = 85 °C 5.85 6.3 with TIM2 active (2) TA = -40 °C to 25 °C 5.59 6 TA = 55 °C 6.10 6.4 TA = 85 °C 6.30 7 1. No floating I/Os 2. Timer 2 clock enabled and counter running 3. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for extenal crystal, the LSE consumption (IDD LSE) must be added. Refer to Table 29 ai18216b -40° C 25° C 85° C VDD [V] 1.8 2.1 2.6 3.1 3.6 18 16 14 12 10 8 6 4 2 0 |
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