STM8L051F3 datasheet(65/96 Pages) STMICROELECTRONICS

65 / 96 page

DS9178 Rev 4

65/96

STM8L051F3

Electrical parameters

8.3.5

Memory characteristics

TA = -40 to 85 °C unless otherwise specified.

Flash memory

Table 32. RAM and hardware registers

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRM

Data retention mode (1)

1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware

registers (only in Halt mode). Guaranteed by characterization.

Halt mode (or Reset)

1.8

Table 33. Flash program and data EEPROM memory

Symbol

Parameter

Conditions

Min

Typ

Max

(1)

Unit

VDD

Operating voltage

(all modes, read/write/erase)

fSYSCLK = 16 MHz

1.8

3.6

tprog

Programming time for 1 or 64 bytes (block)

erase/write cycles (on programmed byte)

6ms

Programming time for 1 to 64 bytes (block)

write cycles (on erased byte)

3ms

Iprog

Programming/ erasing consumption

TA=+25 °C, VDD = 3.0 V

0.7

TA=+25 °C, VDD = 1.8 V

tRET(2)

Data retention (program memory) after 100

erase/write cycles at TA= –40 to +85 °C

TRET = +85 °C

30(1)

years

Data retention (data memory) after 100000

erase/write cycles at TA= –40 to +85 °C

TRET = +85 °C

30(1)

NRW (3)

Erase/write cycles (program memory)

TA = –40 to +85 °C

100(1)

cycles

Erase/write cycles (data memory)

100(1)

(4)

kcycles

1. Guaranteed by characterization results.

2. Conforming to JEDEC JESD22a117

3. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation

addresses a single byte.

4. Data based on characterization performed on the whole data memory.

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