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ZAMC4100 Datasheet(PDF) 17 Page - Renesas Technology Corp |
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ZAMC4100 Datasheet(HTML) 17 Page - Renesas Technology Corp |
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17 / 156 page ![]() ZAMC4100 Datasheet © 2016 Integrated Device Technology, Inc. 17 January 26, 2016 1.2.2. Digital Interface (GPIOs) Table 1.6 GPIO Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Input low voltage VIL -0.3 - 0.8 V Input high voltage VIH 2 - 3.6 V Schmitt Trigger Low to High Threshold Point VT+ 1.4 1.5 1.6 V Schmitt Trigger High to Low Threshold Point VT- 1.1 1.2 1.3 V Input leakage current (at VI =3.3V or 0V) II -1 - 1 µA Tri-state output leakage current (at VI =3.3V or 0V) IOZ -1 - 1 µA Output low voltage VOL - - 0.4 V Output high voltage VOH 2.4 - - V Single GPIO source current ISOURCE - - 5 mA Single GPIO sink current ISINK - - 5 mA 1.2.3. LIN Physical Layer Note: LIN parameters are specified for an ambient temperature range from -40°C to 125°C. Although the internal over-temperature protection might be activated due to device self-heating, LIN communication and MCU operation remain unaffected. Table 1.7 LIN Electrical Parameters Note: See important notes at end of table. Parameter Symbol LIN Spec 2.2 Reference Min Typ. Max Unit Current limitation for driver dominant state IBUS_LIM Parameter 12 40 - 200 mA Input leakage current, dominant state, driver off IBUS_PAS_dom Parameter 13 -1 - - mA Input leakage current, recessive state, driver off IBUS_PAS_rec Parameter 14 - - 20 µA Control unit disconnected from ground 1) IBUS_NO_GND Parameter 15 -1 - 1 mA VBAT supply disconnected IBUS_NO_BAT Parameter 16 - - 100 µA Receiver dominant state (VSUP > 7V) VBUSdom Parameter 17 - - 0.4 VSUP Receiver recessive state (VSUP > 7V) VBUSrec Parameter 18 0.6 - - VSUP Center of receiver threshold VBUS_CNT Parameter 19 0.475 0.5 0.525 VSUP Receiver hysteresis voltage VHYS Parameter 20 - - 0.175 VSUP Voltage drop at serial diodes 2) VSerDiode Parameter 21 0.4 0.7 1 V Battery shift (2) VSHIFT_BAT Parameter 22 - - 0.115 VBAT Ground shift 2) VBUS_GND Parameter 23 - - 0.115 VBAT |
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