UPD75P4308GS datasheet(31/61 Pages) RENESAS

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µPD75P4308

Data Sheet U10909EJ2V1DS

8.2 Program Memory Write Procedure

High-speed program memory write can be executed via the following steps.

(1)

Pull down unused pins to VSS via resistors. Set the X1 pin to low.

(2)

Apply +5 V to the VDD and VPP pins.

(3)

Wait 10

µs.

(4)

Zero-clear mode for program memory addresses.

(5)

Apply +6 V to VDD and +12.5 V to VPP.

(6)

Write data using 1-ms write mode.

(7)

Verify mode. If write is verified, go to step (8) and if write is not verified, go back to steps (6) and (7).

(8)

X [= number of write operations from steps (6) and (7)]

× 1 ms additional write

(9)

4 pulse inputs to the X1 pin updates (increments +1) the program memory address.

(10) Repeat steps (6) to (9) until the last address is completed.

(11) Zero-clear mode for program memory addresses.

(12) Apply +5 V to the VDD and VPP pins.

(13) Power supply OFF

The following diagram illustrates steps (2) to (9).

VPP

VDD

VDD + 1

VDD

VPP

VDD

D0/P60/KR0-

D3/P63/KR3

D4/P50-

D7/P53

MD0/P30

MD1/P31

MD2/P32

MD3/P33

Write

Verify

Additional write

Address

increment

X repetitions

Data input

Data output

Data input

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