S29GL01GS10DFIV13 datasheet(43/108 Pages) CYPRESS

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Document Number: 001-98285 Rev. *R

Page 43 of 108

S29GL01GS/S29GL512S

S29GL256S/S29GL128S

5.7

Embedded Algorithm Performance Table

Notes:

1. Not 100% tested.

2. Typical program and erase times assume the following conditions: 25 °C, 3.0 V VCC, 10,000 cycle, and a random data pattern.

3. Under worst case conditions of 90 °C, VCC = 2.70 V, 100,000 cycles, and a random data pattern.

4. Effective write buffer specification is based upon a 512-byte write buffer operation.

5. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 0000h before Sector and Chip erasure.

6. System-level overhead is the time required to execute the bus-cycle sequence for the program command. See Table 7.1 on page 55 for further information on

command definitions.

Table 5.4 Embedded Algorithm Characteristics (-40°C to +85°C)

Parameter

Typ (Note 2)

Max (Note 3)

Unit

Comments

Sector Erase Time 128 kbyte

275

1100

Includes pre-programming

prior to erasure (Note 5)

Single Word Programming Time (Note 1)

125

400

µs

Buffer Programming Time

2-byte (Note 1)

125

750

µs

32-byte (Note 1)

160

750

64-byte (Note 1)

175

750

128-byte (Note 1)

198

750

256-byte (Note 1)

239

750

512-byte

340

750

Effective Write Buffer Program

Operation per Word

512-byte

1.33

–

µs

Sector Programming Time 128 kB (full Buffer

Programming)

108

192

(Note 6)

Erase Suspend/Erase Resume (tESL)

–

µs

Program Suspend/Program Resume (tPSL)

–

µs

Erase Resume to next Erase Suspend (tERS)100

–

µs

Minimum of 60 ns but

 typical

periods are needed for Erase

to progress to completion.

Program Resume to next Program Suspend (tPRS)100

–

µs

Minimum of 60 ns but

 typical

periods are needed for

Program to progress to

completion.

Blank Check

6.2

8.5

NOP (Number of Program-operations, per Line)

–

256

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